Thin film magnetic memory device having a highly integrated memory array

ABSTRACT

Read word lines and write word lines are provided corresponding to the respective MTJ (Magnetic Tunnel Junction) memory cell rows, and bit lines and reference voltage lines are provided corresponding to the respective MTJ memory cell columns. Adjacent MTJ memory cells share at least one of these signal lines. As a result, the pitches of signal lines provided in the entire memory array can be widened. Thus, the MTJ memory cells can be efficiently arranged, achieving improved integration of the memory array.

This application is a divisional of application Ser. No. 09/832,025filed Apr. 11, 2001 now U.S. Pat. No. 6,608,776.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a thin film magnetic memory device.More particularly, the present invention relates to a random accessmemory (RAM) including memory cells having a magnetic tunnel junction(MTJ).

2. Description of the Background Art

An MRAM (Magnetic Random Access Memory) device has attracted attentionas a memory device capable of non-volatile data storage with low powerconsumption. The MRAM device is a memory device that stores data in anon-volatile manner using a plurality of thin film magnetic elementsformed in a semiconductor integrated circuit and is capable of randomaccess to each thin film magnetic element.

In particular, recent announcement shows that significant progress inperformance of the MRAM device is achieved by using thin film magneticelements having a magnetic tunnel junction (MTJ) as memory cells. TheMRAM device including memory cells having a magnetic tunnel junction isdisclosed in technical documents such as “A 10 ns Read and WriteNon-Volatile Memory Array Using a Magnetic Tunnel Junction and FETSwitch in each Cell”, ISSCC Digest of Technical Papers, TA7.2, February2000, and “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”,ISSCC Digest of Technical Papers, TA7.3, February 2000.

FIG. 88 is a schematic diagram showing the structure of a memory cellhaving a magnetic tunnel junction (hereinafter, also simply referred toas “MTJ memory cell”).

Referring to FIG. 88, the MTJ memory cell includes a magnetic tunneljunction MTJ having its resistance value varied according to the levelof storage data, and an access transistor ATR. The access transistor ATRis formed by a field effect transistor, and is coupled between themagnetic tunnel junction MTJ and ground voltage Vss.

For the MTJ memory cell are provided a write word line WWL forinstructing a data write operation, a read word line RWL for instructinga data read operation, and a bit line BL serving as a data line fortransmitting an electric signal corresponding to the level of storagedata in the data read and write operations.

FIG. 89 is a conceptual diagram illustrating the data read operationfrom the MTJ memory cell.

Referring to FIG. 89, the magnetic tunnel junction MTJ has a magneticlayer FL having a fixed magnetic field of a fixed direction(hereinafter, also simply referred to as “fixed magnetic layer FL”), anda magnetic layer VL having a free magnetic field (hereinafter, alsosimply referred to as “free magnetic layer VL”). A tunnel barrier TBformed from an insulator film is provided between the fixed magneticlayer FL and free magnetic layer VL. According to the level of storagedata, either a magnetic field of the same direction as that of the fixedmagnetic layer FL or a magnetic field of the direction different fromthat of the fixed magnetic layer FL is written to the free magneticlayer VL in a non-volatile manner.

In reading the data, the access transistor ATR is turned ON in responseto activation of the read word line RWL. As a result, a sense current Isflows through a current path formed by the bit line BL, magnetic tunneljunction MTJ, access transistor ATR and ground voltage Vss. The sensecurrent Is is supplied as a constant current from a not-shown controlcircuit.

The resistance value of the magnetic tunnel junction MTJ variesaccording to the relative relation of the magnetic field directionbetween the fixed magnetic layer FL and free magnetic layer VL. Morespecifically, in the case where the fixed magnetic layer FL and freemagnetic layer VL have the same magnetic field direction, the magnetictunnel junction MTJ has a smaller resistance value as compared to thecase where both magnetic layers have different magnetic fielddirections.

Accordingly, in reading the data, a voltage level change at the magnetictunnel junction MTJ due to the sense current Is varies according to themagnetic field direction stored in the free magnetic layer VL. Thus, bystarting supply of the sense current Is after precharging the bit line.BL to a prescribed voltage, the level of storage data in the MTJ memorycell can be read by monitoring a voltage level change on the bit lineBL.

FIG. 90 is a conceptual diagram illustrating the data write operation tothe MTJ memory cell.

Referring to FIG. 90, in writing the data, the read word line RWL isinactivated, and the access transistor ATR is turned OFF. In this state,a data write current for writing a magnetic field to the free magneticlayer VL is applied to the write word line WWL and bit line BL. Themagnetic field direction of the free magnetic layer VL is determined bycombination of the respective directions of the data write currentflowing through the write word line WWL and bit line BL.

FIG. 91 is a conceptual diagram illustrating the relation between therespective directions of the data write current and magnetic field inthe data write operation.

Referring to FIG. 91, a magnetic field Hx of the abscissa indicates thedirection of a magnetic field H(WWL) produced by the data write currentflowing through the write word line WWL. A magnetic field Hy of theordinate indicates the direction of a magnetic field H(BL) produced bythe data write current flowing through the bit line BL.

The magnetic field direction stored in the free magnetic layer VL isupdated only when the sum of the magnetic fields H(WWL) and H(BL)reaches the region outside the asteroid characteristic line shown in thefigure. In other words, the magnetic field direction stored in the freemagnetic layer VL is not updated when a magnetic field corresponding tothe region inside the asteroid characteristic line is applied.

Accordingly, in order to update the storage data of the magnetic tunneljunction MTJ by the data write operation, a current must be applied toboth the write word line WWL and bit line BL. Once the magnetic fielddirection, i.e., the storage data, is stored in the magnetic tunneljunction MTJ, it is held therein in a non-volatile manner until a newdata read operation is conducted.

The sense current Is flows through the bit line BL even in the data readoperation. However, the sense current Is is generally set to a valuethat is smaller than the above-mentioned data write current by about oneor two orders of magnitude. Therefore, it is less likely that thestorage data in the MTJ memory cell is erroneously rewritten due to thesense current Is during the data read operation.

The above-mentioned technical documents disclose a technology of formingan MRAM device, a random access memory, with such MTJ memory cellsintegrated on a semiconductor substrate.

FIG. 92 is a conceptual diagram showing the MTJ memory cells arranged inrows and columns in an integrated manner.

Referring to FIG. 92, with the MTJ memory cells arranged in rows andcolumns on the semiconductor substrate, a highly integrated MRAM devicecan be realized. FIG. 92 shows the case where the MTJ memory cells arearranged in n rows by m columns (where n, m is a natural number).

As described before, the bit line BL, write word line WWL and read wordline RWL must be provided for each MTJ memory cell. Accordingly, n writeword lines WWL1 to WWLn, n read word lines RWL1 to RWLn, and m bit linesBL1 to BLm are required for the n×m MTJ memory cells. In other words,independent word lines must be provided for the read and writeoperations.

FIG. 93 is a diagram showing the structure of the MTJ memory cell formedon the semiconductor substrate.

Referring to FIG. 93, the access transistor ATR is formed in a p-typeregion PAR of a semiconductor main substrate SUB. The access transistorATR has source/drain regions (n-type regions) 110, 120 and a gate 130.The source/drain region 110 is coupled to the ground voltage Vss througha metal wiring formed in a first metal wiring layer M1. A metal wiringformed in a second metal wiring layer M2 is used as the write word lineWWL. The bit line BL is formed in a third metal wiring layer M3.

The magnetic tunnel junction MTJ is formed between the second metalwiring layer M2 of the write word line WWL and the third metal wiringlayer M3 of the bit line BL. The source/drain region 120 of the accesstransistor ATR is electrically coupled to the magnetic tunnel junctionMTJ through a metal film 150 formed in a contact hole, the first andsecond metal wiring layers M1 and M2, and a barrier metal 140. Thebarrier metal 140 is a buffer material for providing electrical couplingbetween the magnetic tunnel junction MTJ and metal wirings.

As described before, in the MTJ memory cell, the read word line RWL isprovided independently of the write word line WWL. In addition, inwriting the data, a data write current for generating a magnetic fieldequal to or higher than a predetermined value must be applied to thewrite word line WWL and bit line BL. Accordingly, the bit line BL andwrite word line WWL are each formed from a metal wiring.

On the other hand, the read word line RWL is provided in order tocontrol the gate voltage of the access transistor ATR. Therefore, acurrent need not be actively applied to the read word line RWL.Accordingly, for the purpose of improving the integration degree, theread word line RWL is conventionally formed from a polysilicon layer,polycide structure, or the like in the same wiring layer as that of thegate 130 without forming an additional independent metal wiring layer.

Since a large number of wirings are required for the data read and writeoperations, integrating the MTJ memory cells on the semiconductorsubstrate results in increase in cell size due to the space required forsuch wirings.

Moreover, in order to integrate the MTJ memory cells, a reduced wiringpitch as well as an increased number of wiring layers are required,causing increase in manufacturing cost due to the complicatedmanufacturing process.

Furthermore, such increased numbers of wirings and wiring layersnecessitate the use of so-called cross-point arrangement, i.e., thearrangement in which the MTJ memory cells are provided on the respectiveintersections of the word lines and bit lines, thereby making itdifficult to ensure a sufficient margin of the read and writeoperations.

In writing the data, a relatively large data write current must beapplied to the bit line BL. Moreover, the direction of the data writecurrent must be controlled according to the level of write data,resulting in complicated circuitry for controlling the data writecurrent.

SUMMARY OF THE INVENTION

It is an object of the present invention to achieve improved integrationof an MRAM device having MTJ memory cells, by reducing the number ofwirings provided in the entire memory array.

In summary, according to one aspect of the present invention, a thinfilm magnetic memory device includes a memory array, a plurality of readword lines, a plurality of data lines, a plurality of write word lines,and a plurality of reference voltage lines. The memory array has aplurality of magnetic memory cells arranged in rows and columns. Each ofthe plurality of magnetic memory cells includes a magnetic storageportion having a resistance value that varies according to a level ofstorage data to be written by first and second data write currents, anda memory cell selection gate for passing a data read currenttherethrough into the magnetic storage portion in a data read operation.The plurality of read word lines are provided corresponding to therespective rows of the magnetic memory cells, for actuating thecorresponding memory cell selection gate according to a row selectionresult in the data read operation. The plurality of data lines areprovided corresponding to the respective columns of the magnetic memorycells, for causing the first data write current and the data readcurrent to flow therethrough in a data write operation and the data readoperation, respectively. The plurality of write word lines are providedcorresponding to the respective rows, and are selectively activatedaccording to a row selection result in the data write operation so as tocause the second data write current to flow therethrough. The pluralityof reference voltage lines are provided corresponding to either therespective rows or the respective columns, for supplying a referencevoltage to be used in the data read operation. Adjacent magnetic memorycells share a corresponding one of at least one of the plurality ofwrite word lines, the plurality of read word lines, the plurality ofdata lines and the plurality of reference voltage lines.

Accordingly, a primary advantage of the present invention is that thenumber of wirings provided in the memory array can be reduced in thethin film magnetic memory device including the magnetic memory cells forconducting the data read and write operations using the write wordlines, read word lines, data lines and reference voltage lines. As aresult, improved integration of the memory array as well as reduced chiparea can be achieved.

According to another aspect of the present invention, a thin filmmagnetic memory device includes a memory array, a plurality of read wordlines, a plurality of data lines, a plurality of write word lines, and aword line current control circuit. The memory array has a plurality ofmagnetic memory cells arranged in rows and columns. Each of theplurality of magnetic memory cells includes a magnetic storage portionhaving a resistance value that varies according to a level of storagedata to be written by first and second data write currents, and a memorycell selection gate for passing a data read current therethrough intothe magnetic storage portion in a data read operation. The plurality ofread word lines are provided corresponding to the respective rows of themagnetic memory cells, for actuating the corresponding memory cellselection gate according to a row selection result in the data readoperation. The plurality of data lines are provided corresponding to therespective columns of the magnetic memory cells, for causing the firstdata write current and the data read current to flow therethrough in adata write operation and the data read operation, respectively. Theplurality of write word lines are provided corresponding to therespective rows, and are selectively activated according to a rowselection result in the data write operation so as to cause the seconddata write current to flow therethrough. The word line current controlcircuit couples the plurality of write word lines to a reference voltagethat is used in the data read operation. Adjacent magnetic memory cellsshare a corresponding one of at least one of the plurality of write wordlines, the plurality of read word lines and the plurality of data lines.

Accordingly, the number of wirings can be reduced that are provided inthe memory array including the magnetic memory cells for conducting thedata read and write operations using the write word lines, read wordlines and data lines. As a result, improved integration of the memoryarray as well as reduced chip area can be achieved.

According to still another aspect of the present invention, a thin filmmagnetic memory device includes a memory array, a plurality of read wordlines, a plurality of signal lines, a read/write control circuit, aplurality of write word lines, and a plurality of control switches. Thememory array has a plurality of magnetic memory cells arranged in rowsand columns. Each of the plurality of magnetic memory cells includes amagnetic storage portion having a resistance value that varies accordingto a level of storage data to be written by first and second data writecurrents, and a memory cell selection gate for passing a data readcurrent therethrough into the magnetic storage portion in a data readoperation. The plurality of read word lines are provided correspondingto the respective rows of the magnetic memory cells, for actuating thecorresponding memory cell selection gate according to a row selectionresult in the data read operation. The plurality of signal lines areprovided corresponding to the respective columns of the magnetic memorycells. Adjacent magnetic memory cells in the row direction share acorresponding one of the plurality of signal lines. The read/writecontrol circuit supplies the first data write current and the data readcurrent to the signal lines in a data write operation and the data readoperation, respectively. The plurality of write word lines are providedcorresponding to the respective rows, and are selectively activatedaccording to a row selection result in the data write operation so as tocause the second data write current to flow therethrough. The pluralityof control switches are provided respectively corresponding to theplurality of signal lines, for electrically coupling a reference voltagethat is used in the data read operation to a corresponding one of theplurality of signal lines. The plurality of control switches eachcouples a selected one of two signal lines corresponding to therespective magnetic memory cells to the reference voltage, according tothe row selection result.

In such a thin film magnetic memory device, the magnetic memory cellsfor conducting the data read and write operations using the write wordlines, read word lines, and common lines functioning both as data lineand reference voltage line can be arranged in the memory array with areduced number of common lines. As a result, improved integration of thememory array as well as reduced chip area can be achieved.

According to yet another aspect of the present invention, a thin filmmagnetic memory device includes a memory array, a plurality of writeword lines, a plurality of read word lines, a plurality of write datalines, and a plurality of read data lines. The memory array has aplurality of magnetic memory cells arranged in rows and columns. Each ofthe plurality of magnetic memory cells includes a magnetic storageportion having a resistance value that varies according to a level ofstorage data to be written when a data write magnetic field applied byfirst and second data write currents is larger than a predeterminedmagnetic field, and a memory cell selection gate for passing a data readcurrent therethrough into the magnetic storage portion in a data readoperation. The plurality of write word lines are provided correspondingto the respective rows of the magnetic memory cells, and are selectivelyactivated according to a row selection result in a data write operationso as to cause the first data write current to flow therethrough. Theplurality of read word lines are provided corresponding to therespective rows, for actuating the corresponding memory cell selectiongate according to a row selection result in the data read operation. Theplurality of write data lines are provided corresponding to therespective columns of the magnetic memory cells, for causing the seconddata write current to flow therethrough in the data write operation. Theplurality of read data lines are provided corresponding to therespective columns, for causing the data read current to flowtherethrough in the data read operation. Adjacent magnetic memory cellsshare a corresponding one of at least one of the plurality of write wordlines, the plurality of read word lines, the plurality of read datalines and the plurality of write data lines.

In such a thin film magnetic memory device, the number of wirings can bereduced that are provided in the memory array including the magneticmemory cells for conducting the data read and write operations using thewrite word lines, read word lines, write data lines and read data lines.As a result, improved integration of the memory array as well as reducedchip area can be achieved.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram showing the overall structure of anMRAM device according to a first embodiment of the present invention.

FIG. 2 is a circuit diagram showing the connection between an MTJ memorycell and signal wirings according to the first embodiment.

FIG. 3 is a timing chart illustrating the data read and write operationsfrom and to the memory cell according to the first embodiment.

FIG. 4 is a structural diagram illustrating the arrangement of thememory cell according to the first embodiment.

FIG. 5 is a block diagram showing the structure of a memory arrayaccording to the first embodiment.

FIG. 6 is a block diagram showing the structure of a memory arrayaccording to a first modification of the first embodiment.

FIG. 7 is a block diagram showing the structure of a memory arrayaccording to a second modification of the first embodiment.

FIGS. 8A and 8B are structural diagrams illustrating the arrangement ofa write word line WWL.

FIG. 9 is a block diagram showing the structure of a memory arrayaccording to a third modification of the first embodiment.

FIG. 10 is a block diagram showing the structure of a memory arrayaccording to a fourth modification of the first embodiment.

FIG. 11 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fifth modification of the firstembodiment.

FIG. 12 is a timing chart illustrating the operation of a common lineSBL corresponding to turning-ON/OFF of a common line control transistorCCT.

FIG. 13 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a second embodiment.

FIG. 14 is a circuit diagram showing the structure of a data writecircuit 50 w and a data read circuit 50 r.

FIG. 15 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a first modification of the secondembodiment.

FIG. 16 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a second modification of thesecond embodiment.

FIG. 17 is a circuit diagram showing the structure of a data readcircuit 51 r.

FIG. 18 is a circuit diagram showing the connection between a memorycell and signal wirings according to a third embodiment.

FIG. 19 is a structural diagram illustrating the arrangement of thememory cell according to the third embodiment.

FIG. 20 is a block diagram showing the structure of a memory arrayaccording to the third embodiment.

FIG. 21 is a block diagram showing the structure of a memory arrayaccording to a first modification of the third embodiment.

FIG. 22 is a block diagram showing the structure of a memory arrayaccording to a second modification of the third embodiment.

FIG. 23 is a block diagram showing the structure of a memory arrayaccording to a third modification of the third embodiment.

FIG. 24 is a block diagram showing the structure of a memory arrayaccording to a fourth modification of the third embodiment.

FIG. 25 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fifth modification of the thirdembodiment.

FIG. 26 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a sixth modification of the thirdembodiment.

FIG. 27 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a seventh modification of thethird embodiment.

FIG. 28 is a block diagram showing the structure of a memory array andits peripheral circuitry according to an eighth modification of thethird embodiment.

FIG. 29 is a circuit diagram showing the connection between a memorycell and signal wirings according to a fourth embodiment.

FIG. 30 is a structural diagram illustrating the arrangement of thememory cell according to the fourth embodiment.

FIG. 31 is a block diagram showing the structure of a memory arrayaccording to the fourth embodiment.

FIG. 32 is a block diagram showing the structure of a memory arrayaccording to a first modification of the fourth embodiment.

FIG. 33 is a block diagram showing the structure of a memory arrayaccording to a second modification of the fourth embodiment.

FIG. 34 is a block diagram showing the structure of a memory arrayaccording to a third modification of the fourth embodiment.

FIG. 35 is a block diagram showing the structure of a memory arrayaccording to a fourth modification of the fourth embodiment.

FIG. 36 is a block diagram showing the structure of a memory arrayaccording to a fifth modification of the fourth embodiment.

FIG. 37 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a sixth modification of the fourthembodiment.

FIG. 38 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a seventh modification of thefourth embodiment.

FIG. 39 is a block diagram showing the structure of a memory array andits peripheral circuitry according to an eighth modification of thefourth embodiment.

FIG. 40 is a circuit diagram showing the connection between a memorycell and signal wirings according to a fifth embodiment.

FIG. 41 is a structural diagram illustrating the arrangement of thememory cell according to the fifth embodiment.

FIG. 42 is a block diagram showing the structure of a memory arrayaccording to the fifth embodiment.

FIG. 43 is a block diagram showing the structure of a memory arrayaccording to a first modification of the fifth embodiment.

FIG. 44 is a block diagram showing the structure of a memory arrayaccording to a second modification of the fifth embodiment.

FIG. 45 is a block diagram showing the structure of a memory arrayaccording to a third modification of the fifth embodiment.

FIG. 46 is a block diagram showing the structure of a memory arrayaccording to a fourth modification of the fifth embodiment.

FIG. 47 is a block diagram showing the structure of a memory arrayaccording to a fifth modification of the fifth embodiment.

FIG. 48 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a sixth modification of the fifthembodiment.

FIG. 49 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a seventh modification of thefifth embodiment.

FIG. 50 is a block diagram showing the structure of a memory array andits peripheral circuitry according to an eighth modification of thefifth embodiment.

FIG. 51 is a circuit diagram showing the connection between an MTJmemory cell and signal wirings according to a sixth embodiment.

FIG. 52 is a structural diagram illustrating the arrangement of the MTJmemory cell according to the sixth embodiment.

FIG. 53 is a block diagram showing the structure of a memory arrayaccording to the sixth embodiment.

FIG. 54 is a block diagram showing the structure of a memory arrayaccording to a first modification of the sixth embodiment.

FIG. 55 is a block diagram showing the structure of a memory arrayaccording to a second modification of the sixth embodiment.

FIG. 56 is a block diagram showing the structure of a memory arrayaccording to a third modification of the sixth embodiment.

FIG. 57 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fourth modification of the sixthembodiment.

FIG. 58 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fifth modification of the sixthembodiment.

FIG. 59 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a sixth modification of the sixthembodiment.

FIG. 60 is a circuit diagram showing the connection between a memorycell and signal wirings according to a seventh embodiment.

FIG. 61 is a structural diagram illustrating the arrangement of thememory cell according to the seventh embodiment.

FIG. 62 is a block diagram showing the structure of a memory arrayaccording to the seventh embodiment.

FIG. 63 is a block diagram showing the structure of a memory arrayaccording to a first modification of the seventh embodiment.

FIG. 64 is a block diagram showing the structure of a memory arrayaccording to a second modification of the seventh embodiment.

FIG. 65 is a block diagram showing the structure of a memory arrayaccording to a third modification of the seventh embodiment.

FIG. 66 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fourth modification of theseventh embodiment.

FIG. 67 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fifth modification of theseventh embodiment.

FIG. 68 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a sixth modification of theseventh embodiment.

FIG. 69 is a circuit diagram showing the connection between a memorycell and signal wirings according to an eighth embodiment.

FIG. 70 is a timing chart illustrating the data write and readoperations to and from the MTJ memory cell according to the eighthembodiment.

FIG. 71 is a structural diagram illustrating the arrangement of the MTJmemory cell according to the eighth embodiment.

FIG. 72 is a block diagram showing the structure of a memory arrayaccording to the eighth embodiment.

FIG. 73 is a block diagram showing the structure of a memory arrayaccording to a first modification of the eighth embodiment.

FIG. 74 is a block diagram showing the structure of a memory arrayaccording to a second modification of the eighth embodiment.

FIG. 75 is a block diagram showing the structure of a memory arrayaccording to a third modification of the eighth embodiment.

FIG. 76 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fourth modification of theeighth embodiment.

FIG. 77 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fifth modification of the eighthembodiment.

FIG. 78 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a sixth modification of the eighthembodiment.

FIG. 79 is a circuit diagram showing the connection between a memorycell and signal wirings according to a ninth embodiment.

FIG. 80 is a structural diagram illustrating the arrangement of the MTJmemory cell according to the ninth embodiment.

FIG. 81 is a block diagram showing the structure of a memory arrayaccording to the ninth embodiment.

FIG. 82 is a block diagram showing the structure of a memory arrayaccording to a first modification of the ninth embodiment.

FIG. 83 is a block diagram showing the structure of a memory arrayaccording to a second modification of the ninth embodiment.

FIG. 84 is a block diagram showing the structure of a memory arrayaccording to a third modification of the ninth embodiment.

FIG. 85 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fourth modification of the ninthembodiment.

FIG. 86 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a fifth modification of the ninthembodiment.

FIG. 87 is a block diagram showing the structure of a memory array andits peripheral circuitry according to a sixth modification of the ninthembodiment.

FIG. 88 is a schematic diagram showing the structure of a memory cellhaving a magnetic tunnel junction.

FIG. 89 is a conceptual diagram illustrating the data read operationfrom the MTJ memory cell.

FIG. 90 is a conceptual diagram illustrating the data write operation tothe MTJ memory cell.

FIG. 91 is a conceptual diagram illustrating the relation between thedirection of a data write current and the direction of a magnetic fieldin the data write operation.

FIG. 92 is a conceptual diagram showing the MTJ memory cells arranged inrows and columns in an integrated manner.

FIG. 93 is a structural diagram of an MTJ memory cell provided on asemiconductor substrate.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings.

First Embodiment

Referring to FIG. 1, an MRAM device 1 according to the first embodimentof the present invention conducts random access in response to anexternal control signal CMD and address signal ADD, thereby conductinginput of write data DIN and output of read data DOUT.

The MRAM device 1 includes a control circuit 5 for controlling theoverall operation of the MRAM device 1 in response to the control signalCMD, and a memory array 10 having a plurality of MTJ memory cells(hereinafter, also simply referred to as “memory cells”) arranged inrows and columns. In the memory array 10, a plurality of write wordlines WWL and a plurality of read word lines RWL are providedcorresponding to the respective MTJ memory cell rows (hereinafter, alsosimply referred to as “memory cell rows”). A plurality of bit lines BLand a plurality of reference voltage lines SL are provided correspondingto the MTJ memory cell columns (hereinafter, also simply referred to as“memory cell columns”). The structure of the memory array 10 will bedescribed later in detail.

The MRAM device 1 further includes a row decoder 20 for conducting rowselection of the memory array 10 according to the decode result of a rowaddress RA indicated by the address signal ADD, a column decoder 25 forconducting column selection of the memory array 10 according to thedecode result of a column address CA indicated by the address signalADD, a word line driver 30 for selectively activating the read word lineRWL and write word line WWL based on the row selection result of the rowdecoder 20, a word line current control circuit 40 for applying a datawrite current to the write word line WWL in the data write operation,and read/write control circuits 50, 60 for applying a data write currentand a sense current in the data write and read operations, respectively.

The read/write control circuits 50, 60 control the voltage level on thebit line BL at both ends of the memory array 10 and apply to the bitline BL the data write current and sense current for conducting the datawrite and read operations, respectively.

Structure and Operation of Memory Cell

Referring to FIG. 2, a read word line RWL, write word line WWL, bit lineBL and reference voltage line SL are provided for the MTJ memory cell ofthe first embodiment.

The memory cell includes a magnetic tunnel junction MTJ and an accesstransistor ATR which are coupled in series with each other. As describedbefore, a MOS transistor, i.e., a field effect transistor formed on thesemiconductor substrate, is typically used as the access transistor ATR.

The access transistor has its gate coupled to the read word line RWL.The access transistor ATR is turned ON (actuated) in response toactivation of the read word line RWL to the selected state (H level,power supply voltage Vcc) so as to electrically couple the magnetictunnel junction MTJ to the reference voltage line SL. The referencevoltage line SL supplies a ground voltage Vss. The magnetic tunneljunction MTJ is electrically coupled between the bit line BL and accesstransistor ATR.

Accordingly, in response to turning-ON of the access transistor ATR, acurrent path is formed by the bit line BL, magnetic tunnel junction MTJ,access transistor ATR and reference voltage line SL. When a sensecurrent Is is supplied to this current path, a voltage changecorresponding to the storage data level of the magnetic tunnel junctionMTJ is produced on the bit line BL.

On the other hand, the access transistor is turned OFF in response toinactivation of the read word line RWL to the non-selected state (Llevel, ground voltage Vss) so as to electrically disconnect the magnetictunnel junction MTJ from the reference voltage line SL.

The write word line WWL is provided near the magnetic tunnel junctionMTJ so as to extend in parallel with the read word line RWL. In writingthe data, a data write current is supplied to the write word line WWLand bit line BL. The storage data level of the memory cell is rewrittenby the sum of the respective magnetic fields produced by these datawrite currents.

Hereinafter, the data write and read operations to and from the memorycells according to the first embodiment will be described with referenceto FIG. 3.

First, the data write operation will be described.

According to the row selection result of the row decoder 20, the wordline driver 30 drives the voltage on the write word line WWL of theselected row to the selected state (H level). In the non-selected rows,the respective voltage levels on the write word lines WWL are retainedin the non-selected state (L level).

In the data write operation, the read word lines RWL are retained in thenon-selected state (L level) without being activated. Since each writeword line WWL is coupled to the ground voltage Vss by the word linecurrent control circuit 40, a data write current Ip is applied to thewrite word line WWL of the selected row. The data write current does notflow through the write word lines WWL of the non-selected rows.

The read/write control circuits 50 and 60 control the voltage on the bitline BL at both ends of the memory array 10, thereby producing a datawrite current in the direction corresponding to the write data level.For example, in order to write the storage data “1”, the bit linevoltage at the read/write control circuit 60 is set to the high voltagestate (power supply voltage Vcc), and the bit line voltage at theopposite read/write control circuit 50 is set to the low voltage state(ground voltage Vss). As a result, a data write current +Iw flowsthrough the bit line BL from the read/write control circuit 60 toward50. In order to write the storage data “0”, the bit line voltages at theread/write control circuits 50 and 60 are respectively set to the highvoltage state (power supply voltage Vcc) and low voltage state (groundvoltage Vss), whereby a data write current −Iw flows through the bitline BL from the read/write control circuit 50 toward 60.

At this time, the data write current ±Iw need not be supplied to everybit line. The read/write control circuits 50 and 60 need only controlthe voltage on the bit line BL so as to selectively supply the datawrite current ±Iw to at least one of the bit lines corresponding to theselected row according to the row selection result of the row decoder25.

By setting the directions of the data write currents Ip and ±Iw as such,one of the data write currents +Iw and −Iw of the opposite directions isselected according to the storage data level “1” or “0” to be written,and the direction of the data write current Ip on the write word lineWWL is fixed regardless of the data level. Thus, the data write currentIp can always be applied to the write word line WWL in the fixeddirection. As a result, the structure of the word line current controlcircuit 40 can be simplified, as described below.

The data read operation will now be described.

In the data read operation, the word line driver 30 drives the read wordline RWL corresponding to the selected row to the selected state (Hlevel) according to the row selection result of the row decoder 20. Thevoltage levels. on the read word lines RWL corresponding to thenon-selected rows are retained in the non-selected state (L level). Inthe data read operation, the write word lines WWL are retained in thenon-selected state (L level) without being activated.

Prior to the data read operation, the bit lines BL are precharged to,e.g., the high voltage state (power supply voltage Vcc). The data readoperation is started in this state. When the read word line RWL of theselected row is activated to H level, a corresponding access transistorATR is responsively turned ON.

As a result, in the memory cell, a current path of the sense current Isis formed between the reference voltage line SL (which supplies theground voltage Vss) and bit line BL through the access transistor ATR.Due to the sense current Is, a voltage drop corresponding to the storagedata level of the memory cell is produced on the bit line BL. Forexample, it is now assumed in FIG. 3 that the fixed magnetic layer FLand free magnetic layer VL have the same magnetic field direction whenthe storage data level is “1”. In this case, the bit line BL has a smallvoltage drop ΔV1 when the storage data is “1”, and has a voltage dropΔV2 larger than ΔV1 when the storage data is “0”. The data level storedin the memory cell can be read by sensing the difference between thevoltage drops ΔV1 and ΔV2.

In the data read operation, the voltage level on the reference voltageline SL must be set to the ground voltage Vss in order to supply thesense current Is. In the data write operation, however, since the accesstransistor ATR is turned OFF, the reference voltage line SL does notparticularly affect the magnetic tunnel junction MTJ. Accordingly, thevoltage level on the reference voltage line SL can be set to the groundvoltage Vss as in the data read operation. Thus, the reference voltageline SL is coupled to a node for supplying the ground voltage Vss.

Referring to FIG. 4, the access transistor ATR is formed in a p-typeregion PAR of a semiconductor main substrate SUB. The reference voltageline SL is provided in a first metal wiring layer M1 so as to beelectrically coupled to one source/drain region 110 of the accesstransistor ATR. The reference voltage line SL is also coupled to a nodefor supplying the ground voltage Vss among the nodes on thesemiconductor substrate.

The other source/drain region 120 is coupled to the magnetic tunneljunction MTJ through metal wirings provided in the first and secondmetal wiring layers M1 and M2, a metal film 150 formed in a contacthole, and a barrier metal 140. The write word line WWL is provided inthe second metal wiring layer M2 near the magnetic tunnel junction MTJ.The read word line RWL is provided in the same layer as that of the gate130 of the access transistor ATR.

The bit line BL is provided in a third metal wiring layer M3 so as to beelectrically coupled to the magnetic tunnel junction MTJ.

Sharing of Signal Line in Memory Array

Referring to FIG. 5, the memory array 10 according to the firstembodiment has a plurality of memory cells MC arranged in rows andcolumns. According to the first embodiment, the read word lines RWL andwrite word lines WWL are provided corresponding to the respective memorycell rows. The bit lines BL and reference voltage lines SL are providedcorresponding to the respective memory cell columns. The read word linesRWL and write word lines WWL extend in the row direction. The bit linesBL and reference voltage lines SL extend in the column direction.

Adjacent memory cells in the row direction share the same referencevoltage line SL. For example, the memory cell group of the first andsecond memory cell columns shares a single reference voltage line SL1.In the other memory cell columns as well, the reference voltage lines SLare arranged similarly. Basically, the reference voltage lines SL supplya constant voltage (ground voltage Vss in the present embodiment).Therefore, the reference voltage lines BL can be shared as such withoutany special voltage control or the like.

The word line current control circuit 40 couples every write word lineWWL to the ground voltage Vss. Accordingly, the data write current Ipcan be applied to the write word line WWL when it is activated to theselected state (H level, power supply voltage Vcc).

Note that, hereinafter, the write word lines, read word lines, bit linesand reference voltage lines are generally denoted with WWW, RWL, BL andSL, respectively. A specific write word line, read word line, bit line,and reference voltage line are denoted with, for example, WWL1, RWL1,BL1 and SL1, respectively.

Sharing the reference voltage line SL between adjacent memory cells inthe row direction enables reduction in the number of wirings provided inthe whole memory array 10, thereby achieving improved integration of thememory array 10 as well as reduced chip area of the MRAM device.

First Modification of First Embodiment

Referring to FIG. 6, in the memory array 10 according to the firstmodification of the first embodiment, adjacent memory cells in the rowdirection share the same bit line BL. For example, the memory cell groupof the first and second memory cell columns shares a single bit lineBL1. In the other memory cell columns as well, the bit lines BL arearranged similarly.

In this case, if the data is to be read from or written to a pluralityof memory cells MC corresponding to the same bit line BL, data conflictoccurs, causing malfunctioning of the MRAM device. Accordingly, in thememory array 10 according to the first modification of the firstembodiment, the memory cells MC are provided in every other memory cellrow and every other memory cell column. Hereinafter, such memory cellarrangement in the memory array 10 is also referred to as “alternatearrangement”. The reference voltage line SL is provided in every memorycell column.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the firstembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the bit lines BL in the memory array10 can be widened. As a result, the memory cells MC can be efficientlyarranged, whereby improved integration of the memory array 10 as well asreduced chip area of the MRAM device can be achieved.

Second Modification of First Embodiment

Referring to FIG. 7, in the memory array 10 according to the secondmodification of the first embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL. For example, thememory cell group of the first and second memory cell rows shares asingle write word line WWL1. In the other memory cell rows as well, thewrite word lines WWL are arranged similarly.

In order to conduct the data write operation normally, a plurality ofmemory cells MC must not be provided at the intersection of the samewrite word line WWL and the same bit line BL. Accordingly, as in thefirst modification of the first embodiment, the memory cells MC arearranged alternately.

In FIG. 7, the reference voltage line SL is provided in every memorycell column. However, as in the structure of FIG. 5, every set ofadjacent two memory cell columns may alternatively share a singlereference voltage line SL.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the firstembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the write word lines WWL in thememory array 10 can be widened. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Such widened the pitch of the write word lines WWL can ensure a largerwidth of the write word lines WWL. Thus, the following effects canfurther be obtained.

FIG. 8A shows the memory cell structure corresponding to thearrangements of FIGS. 5 and 6. In the structure of FIG. 8A, the writeword line WWL is not shared between adjacent memory cell columns.Therefore, it is difficult to ensure the width of each write word lineWWL.

As described before, in the data write operation, a data write currentmust be supplied to both the bit line BL and write word line WWL. Thewrite word line WWL and magnetic tunnel junction MTJ are provided withan interlayer insulating film interposed therebetween. Therefore, thevertical distance between the write word line WWL and magnetic tunneljunction MTJ is larger than that between the bit line BL and magnetictunnel junction MTJ. Accordingly, in order to generate a magnetic fieldof the same intensity at the magnetic tunnel junction MTJ in the datawrite operation, a larger current must be supplied to the write wordline WWL having a larger distance to the magnetic tunnel junction MTJ.

In the metal wirings where the write word line WWL and the like areformed, an excessive current density may possibly cause disconnection orshort-circuit of the wirings due to the phenomenon calledelectromigration. Accordingly, it is desirable to reduce the currentdensity of the write word line WWL.

FIG. 8B shows the memory cell structure corresponding to the arrangementof FIG. 7. In the structure of FIG. 8, the write word line WWL is sharedbetween adjacent memory cell columns. Therefore, the write word line WWLcan be provided using the space for two memory cell rows, whereby thewidth of the write word line WWL can be increased. Thus, a width atleast larger than the width of the bit line BL, i.e., a largercross-sectional area, of the write word line WWL can be ensured. As aresult, the current density of the write word line WWL is suppressed,whereby improved reliability of the MRAM device can be achieved.

For improved reliability, it is also effective to form a metal wiringhaving a large distance to the magnetic tunnel junction MTJ (the writeword line WWL in FIGS. 8A and 8B) from a highlyelectromigration-resistant material. For example, in the case where theother metal wirings are formed from an aluminum alloy (Al alloy), themetal wirings that may possibly be subjected to electromigration may beformed from copper (Cu).

Third Modification of First Embodiment

Referring to FIG. 9, in the memory array 10 according to the thirdmodification of the first embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL. For example, thememory cell group of the first and second memory cell rows shares asingle read word line RWL1. In the other memory cell rows as well, theread word lines RWL are arranged similarly.

In order to conduct the data read operation normally, a plurality ofmemory cells selected by the same read word line RWL must not besimultaneously connected to the same bit line BL. Accordingly, as in thefirst modification of the first embodiment, the memory cells MC arearranged alternately.

The reference voltage line SL is provided in every memory cell column.However, as in the structure of FIG. 5, every set of adjacent two memorycell columns may alternatively share a single reference voltage line SL.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the firstembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the read word lines RWL in thememory array 10 can be widened. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Fourth Modification of First Embodiment

Referring to FIG. 10, in the memory array 10 according to the fourthmodification of the first embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL, as in the secondmodification of the first embodiment. For example, the memory cell groupof the first and second memory cell rows shares a single write word lineWWL1. In the other memory cell rows as well, the write word lines WWLare arranged similarly.

Moreover, adjacent memory cells in the column direction share the readword line RWL. For example, the memory cell group of the second andthird memory cell rows shares the read word line RWL2. In the followingmemory cell rows as well, the read word lines RWL are arrangedsimilarly.

As described before, in order to conduct the data read and writeoperations normally, a plurality of memory cells selected by a singleread word line RWL must not be simultaneously coupled to the same bitline BL, as well as a plurality of memory cells simultaneously selectedby a single write word line WWL must not simultaneously receive a datawrite magnetic field from the same bit line BL. Accordingly, in thefourth modification of the first embodiment as well, the memory cells MCare arranged alternately.

The reference voltage line SL is provided in every memory cell column.However, as in the structure of FIG. 5, every set of adjacent two memorycell columns may alternatively share a single reference voltage line SL.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the firstembodiment, detailed description thereof will not be repeated.

With such a structure, the pitches of the write word lines WWL and readword lines RWL in the memory array 10 can be widened. As a result, thememory cells MC can be more efficiently arranged, whereby furtherimproved integration of the memory array 10 as well as further reducedchip area of the MRAM device can be achieved as compared to the secondand third modifications of the first embodiment.

Moreover, as in the second modification of the first embodiment, it isalso possible to increase the electromigration resistance of the writeword lines WWL in order to improve the reliability of the MRAM device.

Fifth Modification of First Embodiment

Referring to FIG. 11, in the memory array 10 according to the fifthmodification of the first embodiment, the reference voltage lines SL andbit lines BL are integrated into common lines SBL. The common lines SBLare provided corresponding to the respective memory cell columns. FIG.11 exemplarily shows the common lines SBL1 to SBL5 respectivelycorresponding to the first to fifth memory cell columns.

The read/write control circuit 50 includes a current supply circuit 51for supplying a data write current and sense current, and columnselection gates corresponding to the respective memory cell columns.FIG. 11 exemplarily shows the column selection gates CSG1 to CSG5respectively corresponding to the common lines SBL1 to SBL5.Hereinafter, such a plurality of column selection gates are alsogenerally referred to as column selection gates CSG.

The column decoder 25 activates one of a plurality of column selectionlines to the selected state according to the column selection result.The plurality of column selection lines are provided corresponding tothe respective memory cell columns. FIG. 11 exemplarily shows the columnselection lines CSL1 to CSL5 respectively corresponding to the commonlines SBL1 to SBL5. Hereinafter, such a plurality of column selectionlines are also generally referred to as column selection lines CSL.

The column selection gate CSG is turned ON according to the voltagelevel on a corresponding column selection line CSL.

The read/write control circuit 60 includes a current supply circuit 61for supplying a data write current, and write column selection gatescorresponding to the respective memory cell columns. A plurality ofcommon line control transistors are also provided corresponding to therespective memory cell columns. FIG. 11 exemplarily shows the writecolumn selection gates WCG1 to WCG5 and common line control transistorsCCT1 to CCT5 respectively corresponding to the common lines SBL1 toSBL5. Hereinafter, such a plurality of write column selection gates anda plurality of common line control transistors are also generallyreferred to as write column selection gates WCG and common line controltransistors CCT, respectively.

The column decoder 25 also activates one of a plurality of write columnselection lines to the selected state according to the decode result ofthe column address CA. The plurality of write column selection lines areprovided corresponding to the respective memory cell columns. The writecolumn selection lines are activated only in the data write operation.FIG. 11 exemplarily shows the write column selection lines WCSL1 toWCSL5 respectively corresponding to the-common lines SBL1 to SBL5.Hereinafter, such a plurality of write column selection lines are alsogenerally referred to as write column selection lines WCSL.

The write column selection gate WCG is turned ON according to thevoltage level on a corresponding write column selection line WCSL.

The common line control transistor CCT is provided in order to allow thecommon line SBL to have both functions of the reference voltage line SLand bit line BL.

Since the common line SBL also functions as bit line BL, the memorycells MC must be arranged so as to prevent the data from being read fromor written to a plurality of memory cells of the same common line SBL.Accordingly, in the memory array 10 according to the fifth modificationof the first embodiment as well, the memory cells MC are arrangedalternately.

Referring to FIG. 12, the operation of the write word line WWL and readword line RWL in writing and reading the data is the same as thatdescribed in FIG. 3.

When the common line control transistor CCT is turned ON, acorresponding common line SBL is coupled to the ground voltage Vss tofunction as reference voltage line SL.

When a corresponding common line control transistor CCT is turned OFF,the common line SBL is coupled between the current supply circuits 51and 61 through a corresponding column selection gate CSG and writecolumn selection gate WCG.

In writing the data, the column selection gate CSG and write columnselection gate WCG are turned ON according to the column selectionresult, so that the same data write current as that of FIG. 3 flowsthrough the common line SBL.

In reading the data, the column selection gate CSG is turned ONaccording to the column selection result, so that the sense currentflows through the common line SBL. In the structure using the commonlines SBL, the common lines SBL are precharged to the ground voltage Vssprior to the data read operation. Thus, the common line SBL can smoothlyfunctions as bit line BL and reference voltage line SL. Accordingly, thestorage data level retained in the memory cell to be read is sensedaccording to the amount of voltage rise from the ground voltage Vss.

Whether each common line SBL is operated as reference voltage line SL orbit line BL in the data read operation must be determined according tothe row decode result. More specifically, in the memory cell MC of theselected row, it is required that the common line SBL coupled to theaccess transistor ATR functions as reference voltage line SL and thecommon line SBL coupled to the magnetic tunnel junction MTJ functions asbit line BL.

The common line control transistors CCT1, CCT3, . . . corresponding tothe odd memory cell columns receive a control signal RA1 at their gates.The control signal RA1 is activated to H level when an odd memory cellrow is selected in the data read operation.

The common line control transistors CCT2, CCT4, . . . corresponding tothe even memory cell columns receive a control signal /RA1 at theirgates. The control signal/RA1 is activated to H level when an evenmemory cell row is selected in the data read operation.

In the data write operation, both control signals RA1 and /RA1 areinactivated to L level. Thus, each common line control transistor CCT isturned OFF, so that the data write current ±Iw can be supplied to thecommon line SBL according to the column selection result.

With such a structure, the same data read and write operations as thoseof the first embodiment can be conducted using the common line SBLintegrating the respective functions of reference voltage line SL andbit line BL.

As a result, the pitch of signal lines in the column direction can bewidened. Thus, the memory cells MC can be efficiently arranged, so thatimproved integration of the memory array 10 can be achieved.

Moreover, in FIG. 11, adjacent memory cells in the column directionshare the same write word line WWL as in the second modification of thefirst embodiment.

This can widened the pitch of the write word lines WWL in the memoryarray 10. As a result, further improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved. Inis also possible to increase the electromigration resistance of thewrite word lines WWL in order to improve the reliability of the MRAMdevice.

Note that such integration of reference voltage line SL and bit line BLinto common line SBL as shown in this modification may also be appliedin combination with either sharing of the read word line RWL betweenadjacent memory cell rows or sharing of both read word line RWL andwrite word line WWL between adjacent memory rows as respectivelydescribed in the third and fourth modifications of the first embodiment.

Second Embodiment

In the second embodiment, application of a folded bit line structurewill be described.

Referring to FIG. 13, the memory array 10 according to the secondembodiment has a plurality of memory cells MC arranged in rows andcolumns. The read word lines RWL and write word lines WWL extend in therow direction so as to correspond to the respective memory cell rows.The bit lines BL extend in the column direction so as to correspond tothe respective memory cell columns. The reference voltage lines SL areprovided so as to correspond to the respective sets of two adjacentmemory cell columns. Thus, the memory cell columns of the same set sharea single reference voltage line SL. The word line current controlcircuit 40 couples each write word line WWL to the ground voltage Vss.Thus, the data write current Ip can be supplied to the write word lineWWL when it is activated to the selected state (H level, power supplyvoltage Vcc).

The memory cells MC are arranged alternately, that is, provided in everyother memory cell row and every other memory cell column. Therefore, thememory cell MC is connected to the bit line BL in every other row. Thus,a bit line pair can be formed from two bit lines in each set of adjacenttwo memory cell columns. For example, a bit line pair BLP1 can be formedfrom the bit lines BL1 and BL2 respectively corresponding to the firstand second memory cell columns. In this case, the bit line BL2 is alsoreferred to as bit line /BL1 because it transmits the data complementaryto that of the bit line BL1. In the following memory cell columns aswell, the bit lines are similarly arranged such that the bit lines ineach set of memory cell columns form a bit line pair.

Hereinafter, one bit line of each bit line pair corresponding to an oddmemory cell column is also generally referred to as bit line BL, and theother bit line corresponding to an even memory cell column is alsogenerally referred to as bit line /BL. Thus, the data read and writeoperations can be conducted based on a so-called folded bit linestructure.

The read/write control circuit 60 has equalizing transistors that areturned ON/OFF in response to a bit line equalizing signal BLEQ, andprecharging transistors that are turned ON/OFF in response to a bit lineprecharging signal BLPR.

The equalizing transistors are provided corresponding to the respectivebit line pairs, i.e., the respective sets of memory cell columns. FIG.13 exemplarily shows an equalizing transistor 62-1 corresponding to thebit lines BL1 and BL2 (/BL1), and an equalizing transistor 62-2corresponding to the-bit lines BL3 and BL4 (/BL3). For example, theequalizing transistor 62-1 electrically couples the bit lines BL1 andBL2 (/BL1) to each other in response to activation (H level) of the bitline equalizing signal BLEQ. Hereinafter, such a plurality of equalizingtransistors are also generally referred to as equalizing transistors 62.

Similarly, the equalizing transistors 62 corresponding to the other bitline pairs each electrically couples the bit lines BL and /BL of acorresponding bit line pair to each other in response to activation ofthe bit line equalizing signal BLEQ.

The bit line equalizing signal BLEQ is produced by the control circuit5. The bit line equalizing signal BLEQ is activated to H level when theMRAM device 1 is in the stand-by state, when the memory array 10 is inthe non-selected state during active period of the MRAM device 1, andwhen the data write operation is conducted during active period of theMRAM device 1. The bit line equalizing signal BLEQ is activated to Hlevel in order to short-circuit the bit lines of each bit line pair.

The bit line equalizing signal BLEQ is inactivated to L level when thedata read operation is conducted during active period of the MRAMdevice. In response to this, the bit lines BL and /BL of each bit linepair are disconnected from each other.

The precharging transistors are provided corresponding to the respectivebit lines. FIG. 13 exemplarily shows the precharging transistors 64-1 to64-4 respectively corresponding to the bit lines BL1 to BL4.Hereinafter, such a plurality of precharging transistors are alsogenerally referred to as precharging transistors 64. For the other bitlines as well, the precharging transistors 64 are arranged similarly.

The bit line precharging signal BLPR is produced by the control circuit5. The bit line precharging signal BLPR is activated to H level prior tothe start of the data read operation during active period of the MRAMdevice 1. In response to this, each precharging transistor 64 is turnedON, whereby each bit line is precharged to a prescribed prechargevoltage. FIG. 13 exemplarily shows the case where the precharge voltageis the power supply voltage Vcc.

The column selection lines are provided corresponding to the respectivebit line pairs, i.e., the respective sets of memory cell columns. FIG.13 exemplarily shows a column selection line CSL1 corresponding to thefirst and second memory cell columns, and a column selection line CSL2corresponding to the third and fourth memory cell columns.

The column decoder 25 activates one of the plurality of column selectionlines CSL to the selected state (H level) according to the columnselection result.

A data input/output (I/O) line pair DI/OP includes data lines IO and/IO, and transmits the data write current ±Iw in the data writeoperation, and the sense current Is in the data read operation. In otherwords, the data I/O line pair DI/OP is common to the data read and writeoperations.

Hereinafter, the respective structures of column selection gates, datawrite circuit 50 w, data read circuit 50 r and current switching circuit53 a that are included in the read/write control circuit 50 will bedescribed.

The column selection gates are provided corresponding to the respectivememory cell columns. FIG. 13 exemplarily shows the column selectiongates CSG1 to CSG4 respectively corresponding to the first to fourthmemory cell columns.

Two column selection gates CSG corresponding to the same bit line pairare turned ON in response to their common column selection line CSL. Forexample, the column selection gates CSG1 and CSG2 corresponding to thebit line pair BLP1 are turned ON/OFF according to the voltage level oftheir common column selection line CSL1.

One of the bit line pairs is selected according to the decode result ofthe column address CA, i.e., the column selection result. In response tothe column selection line CSL activated according to the columnselection result, corresponding column selection gates CSG are turnedON. As a result, the bit lines BL and /BL of the selected bit line pairare electrically coupled to the respective data lines IO and /IO of thedata I/O line pair DI/OP.

Referring to FIG. 14, the data write circuit 50 w operates in responseto a control signal WE that is activated in the data write operation.The data write circuit 50 w includes a P-type MOS transistor 151 forsupplying a constant current to a node Nw0, a P-type MOS transistor 152forming a current mirror circuit for controlling a passing current ofthe transistor 151, and a current source 153.

The data write circuit 50 w further includes inverters 154, 155 and 156operating in response to an operating current supplied from the nodeNw0. The inverter 154 inverts the voltage level of write data DIN fortransmission to a node Nw1. The inverter 155 inverts the voltage levelof the write data DIN for transmission to an input node of the inverter156. The inverter 156 inverts the output of the inverter 154 fortransmission to a node Nw2. Thus, the data write circuit 50 w sets thevoltage level on the node Nw1 to one of the power supply voltage Vcc andground voltage Vss, and the voltage level on the node Nw2 to the othervoltage, according to the voltage level of the write data DIN.

The data read circuit 50 r operates in response to a control signal REthat is activated in the data read operation, and outputs read dataDOUT.

The data read circuit 50 r includes current source 161 and 162 forreceiving the power supply voltage Vcc and supplying a constant currentto nodes Ns1 and Ns2, respectively, an N-type MOS transistor 163electrically coupled between the node Ns1 and a node Nr1, an N-type MOStransistor 164 electrically coupled between the node Ns2 and a node Nr2,and an amplifier 165 for amplifying the voltage difference between thenodes Ns1 and Ns2 to output the read data DOUT.

A reference voltage Vref is applied to the gates of the transistors 163and 164. The reference voltage Vref and the current supply amount of thecurrent sources 161 and 162 are set according to the amount of the sensecurrent Is. Resistances 166 and 167 are provided in order to pull downthe nodes Ns1 and Ns2 to the ground voltage Vss, respectively. Such astructure enables the data read circuit 50 r to supply the sense currentIs from each of the nodes Nr1 and Nr2.

The data read circuit 50 r also amplifies the difference in voltagechange between the nodes Nr1 and Nr2 as produced according to thestorage data level in the memory cell connected thereto through thecorresponding column selection gate and bit line pair, and outputs theread data DOUT.

The current switching circuit 53 a has a switch SWL1 a for selectivelycoupling one of the node Nw1 of the data write circuit 50 w and the nodeNr1 of the data read circuit 50 r to the data line IO, and a switch SW1b for selectively coupling one of the node Nw2 of the data write circuit50 w and the node Nr2 of the data read circuit 50 r to the data line/IO.

The switches SW1 a and SW1 b operate according to a control signal RWShaving different signal levels for the data read and write operations.

In the data read operation, the switches SW1 a and SW1 b respectivelycouple the output nodes Nr1 and Nr2 of the data read circuit 50 r to thedata lines IO and /IO. In the data write operation, the switches SW1 aand SW1 b respectively couple the nodes Nw1 and Nw2 of the data writecircuit 50 w to the data lines IO and /IO.

Referring back to FIG. 13, the data read and write operations will nowbe described. The following description is given for the case where thethird memory cell column is selected.

First, the data write operation will be described. In response to thecolumn selection result, the column selection line CSL2 is activated tothe selected state (H level), and the column selection gates CSG3 andCSG4 are turned ON. Thus, the data lines IO and /IO are electricallycoupled to the bit lines BL3 and BL4 (/BL3) of the bit line pair BLP2,respectively. In the data write operation, each equalizing transistor 62is turned ON, whereby the bit lines BL3 and BL4 (/BL3) areshort-circuited.

The data write circuit 50 w sets the voltage level of the data line IOto one of the power supply voltage Vcc and ground voltage Vss, and thevoltage level of the data line /IO to the other voltage. For example, inthe case where the write data DIN is at L level, the outputs of theinverters 154 and 155 shown in FIG. 14 are respectively set to the powersupply voltage Vcc (high voltage state) and ground voltage Vss (lowvoltage state). Therefore, a data write current −Iw for writing the Llevel data flows through the data line IO.

The data write current −Iw is supplied to the bit line BL3 through thecolumn selection gate CSG3. The data write current −Iw transmitted tothe bit line BL3 is turned around by the equalizing transistor 62-2 soas to be transmitted along the other bit line BL4 (/BL3) as a data writecurrent +Iw of the opposite direction. The data write current +Iwflowing through the bit line BL4 (/BL3) is transmitted to the data line/IO through the column selection gate CSG4. Accordingly, the read/writecontrol circuit 60 need not have a current sink means, whereby thestructure thereof can be simplified.

In the data write operation, one of the write word lines WWL isactivated to the selected state (H level), and the data write current Ipflows therethrough. Accordingly, in the memory cell column correspondingto the bit line BL3, the L-level data is written to the memory cellcorresponding to the selected write data line WWL having the data writecurrent Ip flowing therethrough.

On the other hand, in the case where the write data DIN is at H level,the respective voltage levels at the nodes Nw1 and Nw2 become oppositeto those described above. Therefore, the data write current flowsthrough the bit lines BL3 and BL4 (/BL3) in the direction opposite tothat described above, whereby the opposite data level is written. Thus,the data write current ±Iw having a direction corresponding to the datalevel of the write data DIN is turned around by the equalizingtransistor 62 and supplied to the bit lines BL and /BL.

In the foregoing description, it is assumed that an odd memory cellcolumn is selected for writing the data. In this case, the data level ofthe write data DIN is directly written to the memory cell MC coupled tothe bit line BL.

The data write current flows through the bit line /BL in the directionopposite to that of the bit line BL. Therefore, in the case where aneven memory cell column is selected, the data level opposite to that ofthe write data DIN is written to the memory cell MC coupled to the bitline /BL. As will be appreciated from the following description,however, in this case as well, the data level of the write data DIN canbe read correctly.

Next, the data read operation will be described.

The memory cells MC in each row are coupled to either the bit lines BLor the bit lines /BL. For example, the memory cells of the first memorycell row are coupled to the bit lines BL1, BL3, . . . , i.e., the bitlines BL, whereas the memory cells in the second memory cell row arecoupled to the bit lines BL2, BL4, . . . , i.e., the bit lines /BL.Similarly, the memory cells in the odd rows are each connected to onebit line BL of a corresponding bit line pair, and the memory cells inthe even rows are each connected to the other bit line /BL of thecorresponding bit line pair.

Therefore, when the read word line RWL is selectively activatedaccording to the row selection result, either the bit line BL or /BL ofeach bit line pair is coupled to a corresponding memory cell MC.

The memory array 10 further has a plurality of dummy memory cells DMCcorresponding to the respective memory cell columns. The dummy memorycells DMC are each coupled to either a dummy read word line DRWL1 orDRWL2, and are arranged in two rows by a plurality of columns. The dummymemory cells coupled to the dummy read word line DRWL1 are respectivelycoupled to the bit lines BL1, BL3, . . . (i.e., one bit line BL of eachbit line pair). The remaining dummy memory cells coupled to the dummyread word line DRWL2 are respectively coupled to the bit lines BL2, BL4,. . . (i.e., the other bit line /BL of each bit line pair).

The dummy read word line DRWL1, DRWL2 is selectively activated such thatthe bit lines that are not connected to the memory cells MC of theselected memory cell row, i.e., either the bit lines BL or /BL, arerespectively coupled to the dummy memory cells DMC. For example, in thecase where an odd memory cell row is selected according to the rowselection result, the dummy read word line DRWL2 is activated to theselected state in order to connect the bit line /BL of each bit linepair to the corresponding dummy memory cell DMC. On the contrary, in thecase where an even memory cell row is selected, the dummy read word lineDRWL1 is activated to the selected state.

As a result, the bit lines BL and /BL of the bit line pairs arerespectively coupled to the memory cells corresponding to the selectedmemory cell row, and dummy memory cells DMC.

The data read operation is also described for the case where the thirdmemory cell column is selected.

Prior to the data read operation, the bit line precharging signal BLPRis activated to H level for a fixed time period, so that each bit lineis precharged to the power supply voltage Vcc.

After precharging, the column selection line CSL2 is activated to theselected state (H level) in response to the column selection result. Inresponse to this, the column selection gates CSG3 and CSG4 are turnedON. As a result, the data lines IO and /IO of the data I/O line pairDI/OP are respectively coupled to the bit lines BL3 and BL4 (/BL3) likein the data write operation.

The data read circuit 50 r supplies the sense current Is of the samedirection to the data lines IO and /IO through the current switchingcircuit 53 a. In the data read operation, the equalizing transistor 62-2is turned OFF. Therefore, the sense current Is supplied from the dataread circuit 50 r flows through the bit lines BL3 and BL4 (/BL3) in thesame direction.

The read word line RWL is activated to the selected state (H level)according to the row selection result, so that a corresponding memorycell is coupled to one of the bit lines BL3 and BL4 (/BL3). Moreover,one of the dummy read word lines DRWL1 and DRWL2 is activated, so thatthe other of the bit lines BL3 and BL4 (/BL3), i.e., the bit line thatis not connected to the memory cell, is coupled to the dummy memory cellDMC.

As described before, the resistance value of the memory cell MC variesaccording to the storage data level. Assuming that the memory cell MCstoring H-level data has a resistance value Rh and the memory cell MCstoring L-level data has a resistance value Rl, a resistance value Rm ofthe dummy memory cell DMC is set to an intermediate value of Rl and Rh.

Thus, the storage data level to be read can be sensed by comparisonbetween voltage changes caused by the sense current Is, i.e., between avoltage change on one bit line coupled to the dummy memory cell DMC anda voltage change on the other bit line coupled to the memory cell MC.This comparison is conducted by the data read circuit 50 r.

The voltage difference between the bit lines BL3 and BL4 (/BL3) istransmitted through the data I/O line pair DI/OP to the nodes Ns1 andNs2 of the data read circuit 50 r. The voltage difference between thenodes Ns1 and Ns2 is amplified by the amplifier 165 and is output asread data DOUT.

Accordingly, in the case where L-level data is stored in the memory cellcoupled to the bit line BL3 (BL), and in the case where H-level data isstored in the memory cell MC coupled to the bit line BL4 (/BL), L-levelis output as read data DOUT. On the contrary, in the case where H-leveldata is stored in the memory cell coupled to the bit line BL3 (BL), andin the case where L-level data is stored in the memory cell MC coupledto the bit line BL4 (/BL), H-level data is output as read data DOUT.

The data read and write operations can thus be conducted based on thefolded bit line structure. As a result, the read and write operationmargins can be ensured.

Moreover, the data write current is turned around by the equalizingtransistor 62 so as to be supplied to the bit lines BL and /BL of thebit line pair. Therefore, the data write operation can be conductedwithout using a voltage of different polarity (negative voltage).Moreover, the direction of the data write current can be switched bymerely setting the voltage on the data line IO to one of the powersupply voltage Vcc and ground voltage Vss as well as setting the voltageon the other data line /IO to the other voltage. As a result, thestructure of the data write circuit 50 w can be simplified. Theread/write control circuit 60 also need not have a current sink means,and therefore can be formed simply with the equalizing transistors 62.

The data write current is turned around and thus supplied ascomplementary data write currents. These complementary data writecurrents respectively generate magnetic field noises in such directionsthat cancel each other. Therefore, reduction in data write noise can beachieved.

First Modification of Second Embodiment

In the first modification of the second embodiment, the write word lineWWL is shared between adjacent memory cells, in addition to the foldedbit line structure shown in the second embodiment.

Referring to FIG. 15, in the memory array 10 according to the firstmodification of the second embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL.

In the read operation, the read word line RWL is activated. The memorycells are connected to every other bit line. Therefore, every set ofadjacent two memory cell columns form a bit line pair, so that the dataread operation based on the folded bit line structure can be conductedin the same manner as that of the second embodiment.

On the other hand, in the data write operation, the write word line WWLshared by the memory cells of different rows is activated. Therefore,the data write operation based on the folded bit line structure is notpossible. Accordingly, the column selection must be conducted separatelyfor the data read operation and data write operation.

In the first modification of the second embodiment, the column selectiongates are divided into read column selection gates RCG and write columnselection gates WCG. Similarly, the column selection lines are dividedinto read column selection lines RCSL and write column selection linesWCSL.

The read column selection lines RCSL and read column selection gates RCGare arranged in the same manner as that of the column selection linesCSL and column selection gates CSG of FIG. 13, and controlled on thebasis of a set of memory cell columns corresponding to a bit line pair.Accordingly, the read operation margin can be ensured as in the case ofthe structure of the second embodiment.

On the other hand, the write column selection lines WCSL and writecolumn selection gates WCG are provided corresponding to the respectivememory cell columns, and controlled independently on a column-by-columnbasis.

The write column selection gates WCG1, WCG3, . . . corresponding to theodd memory cell columns each electrically couples a corresponding bitline BL1, BL3, . . . to the data line IO according to the columnselection result. The write column selection gates WCG2, WCG4, . . .corresponding to the even memory cell columns each electrically couplesa corresponding bit line BL2, BL4, . . . to the data line /IO accordingto the column selection result.

The read/write control circuit 60 includes write current controltransistors corresponding to the respective memory cell columns. Thewrite current control transistor is turned ON in response to activationof a corresponding write column selection line. FIG. 11 exemplarilyshows the write current control transistors 63-1 to 63-4 respectivelycorresponding to the first to fourth memory cell columns, i.e., the bitlines BL1 to BL4. Hereinafter, such a plurality of write current controltransistors are also generally referred to as write current controltransistors 63. The precharging transistors 64 are arranged in the samemanner as that of FIG. 13.

The write current control transistors 63-1, 63-3, . . . corresponding tothe odd memory cell columns each electrically couples a correspondingbit line BL1, BL3, . . . to the data line /IO according to the columnselection result. The write current control transistors 63-2, 63-4, . .. corresponding to the even memory cell columns each electricallycouples a corresponding bit line BL2, BL4, . . . to the data line IOaccording to the column selection result.

Accordingly, in the selected memory cell column, the data write current±Iw can be supplied to the path formed by the data line IO (/IO), writecolumn selection gate WCG, bit line BL, write current control transistor63, and data line /IO (IO). Note that it is possible to control thedirection of the data write current ±Iw by setting the respectivevoltages of the data lines IO and /IO in the same manner as that of thesecond embodiment. Accordingly, like the second embodiment, thestructure of the peripheral circuitry associated with the data writeoperation, i.e., the data write circuit 50 w and read/write controlcircuit 60, can be simplified.

Although the data write operation based on the folded bit line structureis not possible, the pitch of the write word lines WWL in the memoryarray 10 can be widened. As a result, like the second modification ofthe first embodiment, improved integration of the memory array 10 andthus reduced chip area of the MRAM device can be achieved. Improvedreliability of the MRAM device can also be achieved by increasing theelectromigration resistance of the write word lines WWL.

Second Modification of Second Embodiment

In the second modification of the second embodiment, the read word lineRWL is shared between adjacent memory cells, in addition to the foldedbit line structure of the second embodiment.

Referring to FIG. 16, in the memory array 10 according to the secondmodification of the second embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL.

The read/write control circuit 60 has equalizing transistors 62 andprecharging transistors 64. The transistors 62 and 64 are arranged inthe same manner as that of the second embodiment.

In the data write operation, the write word line WWL is activated. Thememory cells are connected to every other bit line. Therefore, every setof adjacent two memory cell columns form a bit line pair, so that thedata write operation based on the folded bit line structure can beconducted in the same manner as that of the second embodiment.Accordingly, the write operation margin can be ensured as in the secondembodiment. Moreover, the structure of the peripheral circuitryassociated with the data write operation, i.e., the data write circuit50 w and read/write control circuit 60, can be simplified as well as thedata write noise can be reduced.

On the other hand, in the data read operation, the read word line RWLshared by a plurality of memory cell rows is activated. In this case,the data read operation based on the folded bit line structure is notpossible. In the data read operation, the sense current must be suppliedto one of the data lines IO and /IO that corresponds to the selectedmemory cell column, but the other data line may be in the floatingstate. In other words, such a floating state of the other data line doesnot adversely affect the data read operation. Accordingly, the columnselection lines and column selection gates can be arranged in the samemanner as that of FIG. 13.

In other words, in the data read operation, the data lines IO and /IOrespectively operate as independent data lines IO1 and IO2, and thesense current is supplied to one of these data lines according to thecolumn selection result.

On the other hand, in the data read operation, the data lines IO and /IOform a data I/O line pair DI/OP as in the case of FIG. 13 so as to serveas complementary data write current supply lines.

Note that as in the case of the first modification of the secondembodiment shown in FIG. 15, the column selection gates and columnselection lines may be independently provided for the data readoperation and data write operation. In this case, the arrangement of theread column selection gates RCG and write column selection gates WCG aswell as the arrangement of the read column selection lines RCSL andwrite column selection lines WCSL need only be inversed from those ofFIG. 15.

In the structure according to the second modification of the secondembodiment, a current switching circuit 53 b and data read circuit 51 rare substituted for the current switching circuit 53 a and data readcircuit 50 r, respectively.

FIG. 17 is a circuit diagram showing the structure of the data readcircuit 51 r.

Referring to FIG. 17, the data read circuit 51 r is different from thedata read circuit 50 r of FIG. 14 in that the data read circuit 51 rsupplies the sense current Is only to the node Nr1. Accordingly, thetransistor 164 shown in FIG. 14 is eliminated, and the reference voltageVref is applied only to the gate of the transistor 163.

The data read circuit 51 r senses the level of the read data DOUT bycomparing a voltage drop caused by the sense current Is with a referencevoltage drop ΔVr. Provided that the data line has a voltage drop ΔVhwhen the H level data is read and a voltage drop ΔVl when the L leveldata is read, ΔVr is set to an intermediate value of ΔVh and ΔVl.

Accordingly, in the data read circuit 51 r, the resistance value of theresistance 167 is set so that the node Ns2 has a voltage level(Vcc−ΔVr).

Referring back to FIG. 16, the current switching circuit 53 b controlsconnection between the output node Nr1 of the data read circuit 51 r andthe data line IO1 (IO), IO2 (/IO) in response to a control signal RRS.In the data read operation, the current switching circuit 53 b connectsthe output node Nr1 of the data read circuit 50 r to one of the datalines IO1 (IO) and IO2 (/IO) according to the column selection result.

More specifically, when an odd memory cell column is selected, thecurrent switching circuit 53 b connects the node Nr1 to the data lineIO1 (IO) in order to supply the sense current Is to the data line IO1(IO). The data line IO2 (/IO) is retained in the floating state at theprecharge voltage.

On the contrary, when an even memory cell column is selected, thecurrent switching circuit 53 b connects the node Nr1 to the data lineIO2 (/IO) in order to supply the sense current Is to the data line IO2(/IO). The data line IO1 (IO) is retained in the floating state at theprecharge voltage.

In the data write operation, the data write circuit 50 w supplies thedata write current to the data line IO, /IO. Therefore, the currentswitching circuit 53 b does not connect the output node Nr1 to the datalines IO and /IO.

Such a structure cannot ensure the read operation margin by the foldedbit line structure, but can widen the pitch of the read word lines RWLin the memory array 10. Therefore, the data read operation can beconducted normally. Moreover, the data write operation can be conductedbased on the folded bit line structure, as well as improved integrationof the memory array 10 and thus reduced chip area of the MRAM device canbe achieved as in the case of the third modification of the firstembodiment.

Third Embodiment

In the third embodiment and the following embodiments, sharing of thesignal lines in other memory cell arrangements will be described.

Referring to FIG. 18, a memory cell according to the third embodimentincludes a magnetic tunnel junction MTJ and an access transistor ATR,which are coupled in series with each other. The access transistor ATRis electrically coupled between the magnetic tunnel junction MTJ and bitline BL. The access transistor ATR has its gate coupled to the read wordline RWL.

The magnetic tunnel junction MTJ is electrically coupled between theaccess transistor ATR and the reference voltage line SL for supplyingthe ground voltage Vss. Accordingly, the bit line BL is not directlycoupled to the magnetic tunnel junction MTJ, but is connected theretothrough the access transistor ATR.

The memory cell of the third embodiment corresponds to the memory cellof the first embodiment with its reference voltage line SL and bit lineBL switched in position with respect to the magnetic tunnel junction MTJand access transistor ATR. Accordingly, the kinds of signal lines arethe same as those of the first embodiment, and each signal line has thesame voltage and current waveform as those of the first embodiment inthe data read and write operations. Therefore, detailed descriptionthereof will not be repeated.

Referring to FIG. 19, the access transistor ATR is formed in a p-typeregion PAR of a semiconductor main substrate SUB. The bit line BL isformed in a first metal wiring layer M1 so as to be electrically coupledto one source/drain region 110 of the access transistor ATR.

The other source/drain region 120 is coupled to the magnetic tunneljunction MTJ through the metal wirings respectively provided in thefirst and second metal wiring layers M1 and M2, a metal film 150 formedin a contact hole, and a barrier metal 140. The write word line WWL isprovided in the second metal wiring layer M2 near the magnetic tunneljunction MTJ. The read word line RWL is provided in the same layer asthat of the gate 130 of the access transistor ATR.

The reference voltage line SL is provided in an independent metal wiringlayer, i.e., a third metal wiring layer M3. The reference voltage lineSL is coupled to a node for supplying the ground voltage Vss among thenodes on the semiconductor substrate.

Thus, in the memory cell of the third embodiment, the magnetic tunneljunction MTJ is not directly coupled to the bit line BL, but is coupledthereto through the access transistor ATR. Therefore, each bit line BLis not directly coupled to a multiplicity of magnetic tunnel junctionsMTJ of a corresponding memory cell column, but is electrically coupledonly to the memory cell to be read, i.e., the memory cell of the memorycell row corresponding to the read word line RWL activated to theselected state (H level). Accordingly, the capacitance of the bit lineBL can be suppressed, whereby a high-speed operation can be achievedparticularly for the read operation.

Referring to FIG. 20, in the memory array 10, the memory cells MC havingthe structure of FIG. 18 are arranged in rows and columns. Moreover,like the structure of the first embodiment shown in FIG. 5, adjacentmemory cells in the row direction share the same reference voltage lineSL.

The arrangement of the read word lines RWL, write word lines WWL and bitlines BL as well as the structure of the word line current controlcircuit 40 are the same as those of FIG. 5. Therefore, descriptionthereof will not be repeated.

Thus, in the memory cell arrangement of the third embodiment as well,the reference voltage line SL can be shared by a plurality of memorycell columns. Thus, the number of wirings in the entire memory array 10can be reduced, whereby improved integration of the memory array 10 andthus reduced chip area of the MRAM device can be achieved.

First Modification of Third Embodiment

Referring to FIG. 21, in the memory array 10 according to the firstmodification of the third embodiment, adjacent memory cells in the rowdirection share the same bit line BL as in the case of FIG. 6. Thereference voltage lines SL are provided corresponding to the respectivememory cell columns.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the thirdembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the bit lines BL in the memory array10 can be widened also in the memory cell arrangement of the thirdembodiment capable of achieving a high-speed data read operation. As aresult, the memory cells MC can be efficiently arranged, wherebyimproved integration of the memory array 10 as well as reduced chip areaof the MRAM device can be achieved.

In the memory cell structure of the third embodiment, the distancebetween the bit line BL and magnetic tunnel junction MTJ is larger thanthat between the write word line WWL and magnetic tunnel junction MTJ.This requires a larger data write current to be supplied to the bit lineBL. Accordingly, increased electromigration resistance of the bit linesBL is effective for improved reliability of the MRAM device.

More specifically, in the memory cell arrangement of the thirdembodiment, increased electromigration resistance of the bit line BL canbe achieved by making the line width (cross-sectional area) of the bitline BL larger than that of the write word line WWL having a shorterdistance to the magnetic tunnel junction. As a result, the reliabilityof the MRAM device can be improved. Regarding a material as well, it isdesirable to form the bit line BL from a highlyelectromigration-resistant material.

Second Modification of Third Embodiment

Referring to FIG. 22, in the memory array 10 according to the secondmodification of the third embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL as in the case ofFIG. 7. The memory cells MC are arranged alternately for the same reasonas that of FIG. 7. The reference voltage lines SL are providedcorresponding to the respective memory cell columns in FIG. 22. However,adjacent memory cells in the row direction may alternatively share asingle reference voltage line SL as in the structure of FIG. 20.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the thirdembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the write word lines WWL in thememory array 10 can be widened also in the memory cell arrangement ofthe third embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Third Modification of Third Embodiment

Referring to FIG. 23, in the memory array 10 according to the thirdmodification of the third embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL as in the case ofFIG. 9. The memory cells MC are arranged alternately for the same reasonas that of FIG. 9. The reference voltage lines SL are providedcorresponding to the respective memory cell columns in FIG. 23. However,every set of adjacent two memory cell columns may alternatively share asingle reference voltage line SL as in the structure of FIG. 20.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the thirdembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the read word lines WWL in thememory array 10 can be widened also in the memory cell arrangement ofthe third embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Fourth Modification of Third Embodiment

Referring to FIG. 24, in the memory array 10 according to the fourthmodification of the third embodiment, adjacent memory cells in thecolumn direction share the same write word line. WWL as in the secondmodification of the third embodiment. Moreover, the read word line RWLis also shared between adjacent memory cells in the column direction.For example, the memory cell group of the second and third memory cellrows shares the same read word line RWL2. In the following memory cellrows as well, the read word lines RWL and write word lines WWL arearranged similarly.

The memory cells MC are arranged alternately for the same reason as thatof FIG. 10. The reference voltage lines SL are provided corresponding tothe respective memory cell columns in FIG. 24. However, adjacent memorycells in the column direction may alternatively share a single referencevoltage line SL as in the structure of FIG. 20.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the thirdembodiment, detailed description thereof will not be repeated.

With such a structure, the pitches of the write word lines WWL and readword lines RWL in the memory array 10 can be widened also in the memorycell arrangement of the third embodiment. As a result, the memory cellsMC can be efficiently arranged, whereby further improved integration ofthe memory array 10 as well as further reduced chip area of the MRAMdevice can be achieved as compared to the second and third modificationsof the third embodiment.

Fifth Modification of Third Embodiment

Referring to FIG. 25, the structure of the memory array 10 andperipheral circuitry according to the fifth modification of the thirdembodiment is similar to that of the fifth modification of the firstembodiment shown in FIG. 11.

In the memory cell of the third embodiment, it is required in the dataread operation that the common line SBL coupled to the access transistorATR functions as bit line BL and the common line SBL coupled to themagnetic tunnel junction MTJ functions as reference voltage line SL.This is opposite to the function of the common line. SBL in the fifthmodification of the first embodiment.

More specifically, it is required that turning ON/OFF of the common linecontrol transistor CCT according to the row selection result isconducted in the manner opposite to that of the fifth modification ofthe first embodiment. Accordingly, in the fifth modification of thethird embodiment, a control signal /RA1 is applied to the gates of thecommon line control transistors CCT1, CCT3, . . . corresponding to theodd memory cell columns. A control signal RA1 is applied to the gates ofthe common line control transistors CCT2, CCT4, . . . corresponding tothe even memory cell columns. The control signals RA1 and /RA1 are setin the same manner as that of the fifth modification of the firstembodiment.

Since the fifth modification of the third embodiment is the same as thefifth modification of the first embodiment except for control of thecommon line control transistors CCT, detailed description thereof willnot be repeated.

With such a structure, in the memory cell arrangement of the thirdembodiment as well, the same data read and write operations as those ofthe first embodiment can be conducted using the common line SBLintegrating the respective functions of reference voltage line SL andbit line BL.

As a result, the pitch of signal lines in the column direction can bewidened. Thus, the memory cells MC can be arranged efficiently, so thatimproved integration of the memory array 10 can be achieved. Moreover,increased electromigration resistance of the common line SBL can beachieved by ensuring a sufficient line width, i.e., cross-sectionalarea, of the common line SBL that receives a large data write current inthe data write operation. As a result, the reliability of the MRAMdevice can be improved.

Moreover, in FIG. 25, adjacent memory cells in the column directionshare a single write word line WWL as in the second modification of thethird embodiment.

Accordingly, the pitch of the write word lines WWL in the memory array10 can be widened. As a result, further improved integration of thememory array 10 as well as reduced chip area of the MRAM device can beachieved.

Note that such integration of reference voltage line SL and bit line BLinto common line SBL as shown in this modification may also be appliedin combination with either sharing of the read word line RWL betweenadjacent memory cell rows or sharing of both read word line RWL andwrite word line WWL between adjacent memory rows as respectivelydescribed in the third and fourth modifications of the third embodiment.

Sixth Modification of Third Embodiment

Referring to FIG. 26, in the memory cells of the third embodimentarranged in rows and columns, the folded bit line structure is appliedusing two bit lines of each set of adjacent two memory cell columns, asin the case of the second embodiment.

The structure of FIG. 26 is different from that of FIG. 13 in that, ineach memory cell MC, the access transistor ATR is connected to the bitline and the magnetic tunnel junction MTJ is connected to the referencevoltage line SL.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 13, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the third embodiment aswell, the read and write operation margins can be ensured by the foldedbit line structure. Moreover, like the second embodiment, the structureof the peripheral circuitry can be simplified as well as the data writenoise can be reduced.

Seventh Modification of Third Embodiment

In the seventh modification of the third embodiment, the write word lineWWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the sixth modification of the thirdembodiment.

The structure of FIG. 27 is different from that of FIG. 15 in that, ineach memory cell MC, the access transistor ATR is connected to the bitline BL and the magnetic tunnel junction MTJ is connected to thereference voltage line SL.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 15, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the third embodiment aswell, the data read operation based on the folded bit line structureensures the operation margin. At the same time, sharing the write wordlines achieves improved integration of the memory array 10.

Eighth Modification of Third Embodiment

In the eighth modification of the third embodiment, the read word lineRWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the sixth modification of the thirdembodiment.

The structure of FIG. 28 is different from that of FIG. 16 in that, ineach memory cell MC, the access transistor ATR is connected to the bitline BL and the magnetic tunnel junction MTJ is connected to thereference voltage line SL.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 16, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the third embodiment aswell, the data write operation based on the folded bit line structureensures the operation margin, simplifies the structure of the peripheralcircuitry and reduces the data write noise. At the same time, sharingthe read word lines achieves improved integration of the memory array10.

Fourth Embodiment

Referring to FIG. 29, a read word line RWL, write word line WWL, bitline BL and reference voltage line SL are provided for the memory cellof the fourth embodiment.

The access transistor ATR is electrically coupled between the magnetictunnel junction MTJ and the reference voltage line SL for supplying theground voltage Vss. The access transistor ATR has its gate coupled tothe read word line RWL. The magnetic tunnel junction MTJ is coupled tothe bit line BL.

The read word line RWL extends in the memory cell row direction. Thewrite word line WWL extending in parallel with the read word line RWL isprovided near the magnetic tunnel junction MTJ. The reference voltageline SL extends in parallel with the write word line WWL and read wordline RWL.

The memory cell of the fourth embodiment is different from that of thefirst embodiment only in that the reference voltage line SL extends inthe row direction, i.e., in parallel with the read wordline RWL andwrite word line WWL. Accordingly, the kinds of signal lines are the sameas those of the first embodiment, and each signal line has the samevoltage and current waveform as those of the first embodiment in thedata read and write operations. Therefore, detailed description thereofwill not be repeated.

Referring to FIG. 30, the access transistor ATR is formed in a p-typeregion PAR of a semiconductor main substrate SUB. The reference voltageline SL is formed in a first metal wiring layer M1 so as to beelectrically coupled to one source/drain region 110 of the accesstransistor ATR. The reference voltage line SL is coupled to a node forsupplying the ground voltage Vss among the nodes on the semiconductorsubstrate.

The other source/drain region 120 is coupled to the magnetic tunneljunction MTJ through the metal wirings respectively provided in thefirst and second metal wiring layers M1 and M2, a metal film 150 formedin a contact hole, and a barrier metal 140. The write word line WWL isprovided in the second metal wiring layer M2 near the magnetic tunneljunction MTJ. The read word line RWL is provided in the same layer asthat of the gate 130 of the access transistor ATR.

The bit line BL is provided in an independent metal wiring layer, i.e.,a third metal wiring layer M3, so as to be electrically coupled to themagnetic tunnel junction MTJ.

Referring to FIG. 31, in the memory array 10, the memory cells MC havingthe structure of FIG. 29 are arranged in rows and columns. Adjacentmemory cells in the column direction share the same reference voltageline SL. For example, the memory cell group of the first and secondmemory cell rows shares a single reference voltage line SL1. In theother memory cell columns as well, the reference voltage lines SL arearranged similarly. Basically, the reference voltage lines SL supply aconstant voltage (ground voltage Vss in the present embodiment).Therefore, the reference voltage lines BL can be shared as such withoutany special voltage control or the like.

The arrangement of the read word lines RWL, write word lines WWL and bitlines BL as well as the structure of the word line current controlcircuit 40 are the same as those of FIG. 5. Therefore, descriptionthereof will not be repeated.

Thus, even in the memory cell arrangement of the fourth embodiment,i.e., the memory cell arrangement having the reference voltage lines SLextending in the row direction, the reference voltage line SL can beshared by a plurality of memory cells. Thus, the number of wirings inthe entire memory array 10 can be reduced, whereby improved integrationof the memory array 10 as well as reduced chip area of the MRAM devicecan be achieved.

First Modification of Fourth Embodiment

Referring to FIG. 32, in the memory array 10 according to the firstmodification of the fourth embodiment, adjacent memory cells in the rowdirection share the same bit line BL. For example, the memory cell groupof the first and second memory cell columns shares the same bit lineBL1. The reference voltage lines SL are provided corresponding to therespective memory cell columns.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the fourthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the bit lines BL in the memory array10 can be widened also in the memory cell arrangement of the fourthembodiment. As a result, the memory cells MC can be efficientlyarranged, whereby improved integration of the memory array 10 as well asreduced chip area of the MRAM device can be achieved.

Second Modification of Fourth Embodiment

Referring to FIG. 33, in the memory array 10 according to the secondmodification of the fourth embodiment, both the reference voltage lineSL and bit line BL are shared. The reference voltage line SL is sharedbetween adjacent memory cells in the column direction as in the case ofFIG. 31, whereas the bit line BL is shared between adjacent memory cellsin the row direction as in the case of FIG. 32.

With such a structure, the respective numbers of wirings in the row andcolumn directions can be reduced, whereby further improved integrationof the memory array 10 as well as further reduced chip area of the MRAMdevice can be achieved.

Third Modification of Fourth Embodiment

Referring to FIG. 34, in the memory array 10 according to the thirdmodification of the fourth embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL, in addition to thestructure of FIG. 31 in which the reference voltage line SL is shared.The memory cells MC are arranged alternately for the same reason as thatof FIG. 7.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the fourthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the write word lines WWL in thememory array 10 can be widened also in the memory cell arrangement ofthe fourth embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

In the memory cell structure of the fourth embodiment, the write wordline WWL has a larger distance to the magnetic tunnel junction MTJ. Thisrequires a large data write current to be applied to the write word lineWWL as in the case of the memory cell of the first embodiment.

With such reduction in limitations on pitch of the write word lines WWL,a sufficient cross-sectional area of the write word line WWL is ensured,so that the current density thereof is reduced. As a result,electromigration resistance thereof is increased, whereby improvedreliability of the MRAM device can be achieved. Regarding a material aswell, it is desirable to form the write word line WWL from a materialhaving higher electromigration resistance than that of the bit line BL.

Fourth Modification of Fourth Embodiment

Referring to FIG. 35, in the memory array 10 according to the fourthmodification of the fourth embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL, in addition to thestructure of FIG. 33 in which the reference voltage line SL and bit lineBL are shared. For example, the memory cell group of the first andsecond memory cell rows shares the same read word line RWL1. The memorycells MC are arranged alternately for the same reason as that of FIG. 9.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the fourthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the read word lines RWL in thememory array 10 can be widened also in the memory cell arrangement ofthe fourth embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Fifth Modification of Fourth Embodiment

Referring to FIG. 36, in the memory array 10 according to the fifthmodification of the fourth embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL and the samereference voltage line SL, as in the third modification of the fourthembodiment.

In the fifth modification of the fourth embodiment, the read word lineRWL is also shared between adjacent memory cells in the columndirection. For example, the memory cell group of the second and thirdmemory cell rows shares the same read word line RWL2. In the followingmemory cell rows as well, the write word lines WWL and read word linesRWL are arranged similarly.

The memory cells MC are arranged alternately for the same reason as thatof FIG. 10. Like the write word line WWL, the reference voltage line SLis also shared between adjacent memory cells in the column direction.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the fourthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitches of the write word lines WWL and readword lines RWL in the memory array 10 can be widened also in the memorycell arrangement of the fourth embodiment. As a result, the memory cellsMC can be arranged more efficiently, whereby further improvedintegration of the memory array 10 as well as further reduced chip areaof the MRAM device can be achieved as compared to the third and fourthmodifications of the fourth embodiment.

Sixth Modification of Fourth Embodiment

Referring to FIG. 37, in the memory cells of the fourth embodimentarranged in rows and columns, the folded bit line structure is appliedusing two bit lines of each set of adjacent two memory cell columns, asin the case of the second embodiment.

The structure of FIG. 37 is different from that of FIG. 13 in that thereference voltage lines SL extend in the row direction.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 13, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the fourth embodiment aswell. the read and write operation margins can be ensured by the foldedbit line structure. Moreover, like the second embodiment, the structureof the peripheral circuitry including data write circuit 50 w andread/write control circuit 60 can be simplified as well as the datawrite noise can be reduced.

Seventh Modification of Fourth Embodiment

In the seventh modification of the fourth embodiment, the write wordline WWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the sixth modification of the thirdembodiment.

The structure of FIG. 38 is different from that of FIG. 15 in that thereference voltage lines SL extend in the row direction.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 15, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the fourth embodiment aswell, the data read operation based on the folded bit line structureensures the operation margin. At the same time, sharing the write wordlines achieves improved integration of the memory array 10.

Eighth Modification of Fourth Embodiment

In the eighth modification of the fourth embodiment, the read word lineRWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the sixth modification of the fourthembodiment.

The structure of FIG. 39 is different from that of FIG. 16 in that thereference voltage lines SL extend in the row direction.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 16, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the fourth embodiment aswell, the data write operation based on the folded bit line structureensures the operation margin, simplifies the structure of the peripheralcircuitry and reduces the data write noise. At the same time, sharingthe read word lines achieves improved integration of the memory array10.

Fifth Embodiment

Referring to FIG. 40, a memory cell according to the fourth embodimentincludes a magnetic tunnel junction MTJ and an access transistor ATR,which are coupled in series with each other. The access transistor ATRis electrically coupled between the magnetic tunnel junction MTJ and bitline BL. The access transistor ATR has its gate coupled to the read wordline RWL. Like the fourth embodiment, the reference voltage lines SLextend in the row direction.

The magnetic tunnel junction MTJ is electrically coupled between theaccess transistor ATR and the reference voltage line SL for supplyingthe ground voltage Vss. Accordingly, the bit line BL is not directlycoupled to the magnetic tunnel junction MTJ, but is connected theretothrough the access transistor ATR.

The memory cell of the fifth embodiment corresponds to the memory cellof the fourth embodiment with its reference voltage line SL and bit lineBL switched in position with respect to the magnetic tunnel junction MTJand access transistor ATR. Accordingly, the kinds of signal lines arethe same as those of the first embodiment, and each signal line has thesame voltage and current waveform as those of the first embodiment inthe data read and write operations. Therefore, detailed descriptionthereof will not be repeated.

Referring to FIG. 41, the access transistor ATR is formed in a p-typeregion PAR of a semiconductor main substrate SUB. The bit line BL isformed in a first metal wiring layer M1 so as to be electrically coupledto one source/drain region 110 of the access transistor ATR.

The other source/drain region 120 is coupled to the magnetic tunneljunction MTJ through the metal wirings respectively provided in thefirst and second metal wiring layers M1 and M2, a metal film 150 formedin a contact hole, and a barrier metal 140. The write word line WWL isprovided in the second metal wiring layer M2 near the magnetic tunneljunction MTJ. The read word line RWL is provided in the same layer asthat of the gate 130 of the access transistor ATR.

The reference voltage line SL is provided in an independent metal wiringlayer, i.e., a third metal wiring layer M3. The reference voltage lineSL is coupled to a node for supplying the ground voltage Vss among thenodes on the semiconductor substrate.

Thus, in the memory cell of the fifth embodiment, the magnetic tunneljunction MTJ is not directly coupled to the bit line BL, but is coupledthereto through the access transistor ATR. Therefore, each bit line BLis not directly coupled to a multiplicity of magnetic tunnel junctionsMTJ of a corresponding memory cell column, but is electrically coupledonly to the memory cell to be read, i.e., the memory cell of the memorycell row corresponding to the read word line RWL activated to theselected state (H level). Accordingly, the capacitance of the bit lineBL can be suppressed, whereby a high-speed operation can be achievedparticularly for the read operation.

Referring to FIG. 42, in the memory array 10, the memory cells MC havingthe structure of FIG. 40 are arranged in rows and columns. Moreover,like the structure of the fourth embodiment shown in FIG. 31, adjacentmemory cells in the column direction share the same reference voltageline SL.

The arrangement of the read word lines RWL, write word lines WWL and bitlines BL as well as the structure of the word line current controlcircuit 40 are the same as those of FIG. 31. Therefore, descriptionthereof will not be repeated.

Thus, in the memory cell arrangement of the fifth embodiment as well,the reference voltage line SL can be shared between adjacent memorycells in the column direction. Thus, the number of wirings in the entirememory array 10 can be reduced, whereby improved integration of thememory array 10 as well as reduced chip area of the MRAM device can beachieved.

First Modification of Fifth Embodiment

Referring to FIG. 43, in the memory array 10 according to the firstmodification of the fifth embodiment, adjacent memory cells in the rowdirection share the same bit line BL as in the case of FIG. 32. Thereference voltage lines SL are provided corresponding to the respectivememory cell columns.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the fifthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the bit lines BL in the memory array10 can be widened also in the memory cell arrangement of the fifthembodiment capable of achieving a high-speed data read operation. As aresult, the memory cells MC can be efficiently arranged, wherebyimproved integration of the memory array 10 as well as reduced chip areaof the MRAM device can be achieved.

As in the case of the third embodiment, in the memory cell structure ofthe fifth embodiment, the distance between the bit line BL and magnetictunnel junction MTJ is larger than that between the write word line WWLand magnetic tunnel junction MTJ. This requires a larger data writecurrent to be supplied to the bit line BL. Accordingly, increasedelectromigration resistance of the bit lines BL is effective forimproved reliability of the MRAM device.

More specifically, in the memory cell arrangement of the fifthembodiment, increased electromigration resistance of the bit line BL canbe achieved by making the line width (cross-sectional area) of the bitline BL larger than that of the write word line WWL having a shorterdistance to the magnetic tunnel junction. As a result, the reliabilityof the MRAM device can be improved. Regarding the material as well, itis desirable to form the bit line BL from a highlyelectromigration-resistant material.

Second Modification of Fifth Embodiment

Referring to FIG. 44, in the memory array 10 according to the secondmodification of the fifth embodiment, both the reference voltage line SLand bit line BL are shared, as in the case of FIG. 33. The referencevoltage line SL is shared between adjacent memory cells in the columndirection, as in the case of FIG. 42. The bit line BL is shared betweenadjacent memory cells in the row direction, as in the case of FIG. 43.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the fifthembodiment, detailed description thereof will not be repeated.

With such a structure, the respective numbers of wirings in the row andcolumn directions can be reduced, whereby further improved integrationof the memory array 10 as well as further reduced chip area of the MRAMdevice can be achieved.

Third Modification of Fifth Embodiment

Referring to FIG. 45, in the memory array 10 according to the thirdmodification of the fifth embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL, in addition to thestructure of FIG. 42 in which the reference voltage line SL is shared.The memory cells MC are arranged alternately for the same reason as thatof FIG. 7.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the fifthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the write word lines WWL in thememory array 10 can be widened in the memory cell arrangement of thefifth embodiment. As a result, the memory cells MC can be efficientlyarranged, whereby improved integration of the memory array 10 as well asreduced chip area of the MRAM device can be achieved.

Fourth Modification of Fifth Embodiment

Referring to FIG. 46, in the memory array 10 according to the fourthmodification of the fifth embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL. The memory cells MCare arranged alternately for the same reason as that of FIG. 9.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the fifthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the read word lines RWL in thememory array 10 can be widened also in the memory cell arrangement ofthe fifth embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Fifth Modification of Fifth Embodiment

Referring to FIG. 47, in the memory array 10 according to the fifthmodification of the fifth embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL as in the thirdmodification of the fifth embodiment. In addition, the read word lineRWL is also shared between adjacent memory cells in the columndirection. For example, the memory cell group of the second and thirdmemory cell rows shares the same read word line RWL2. In the followingmemory cell rows as well, the read word lines RWL and write word linesWWL are arranged similarly. The memory cells MC are arranged alternatelyfor the same reason as that of FIG. 10. Like the write word line WWL,the reference voltage line SL is shared between adjacent memory cells inthe column direction.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the fifthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitches of the write word lines WWL and readword lines RWL in the memory array 10 can be widened also in the memorycell arrangement of the fifth embodiment. As a result, the memory cellsMC can be arranged more efficiently, whereby further improvedintegration of the memory array 10 as well as further reduced chip areaof the MRAM device can be achieved as compared to the third and fourthmodifications of the fifth embodiment.

Sixth Modification of Fifth Embodiment

Referring to FIG. 48, in the memory cells of the fifth embodimentarranged in rows and columns, the folded bit line structure is appliedusing two bit lines of each set of adjacent two memory cell columns, asin the case of the second embodiment.

The structure of FIG. 48 is different from that of FIG. 13 in that theaccess transistor ATR and magnetic tunnel junction MTJ of each memorycell MC are respectively connected to the bit line BL and referencevoltage line SL, and in that the reference voltage lines SL extend inthe row direction.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 13, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the fourth embodiment aswell, the read and write operation margins can be ensured by the foldedbit line structure. Moreover, like the second embodiment, the structureof the peripheral circuitry including data write circuit 50 w andread/write control circuit 60 can be simplified as well as the datawrite noise can be reduced.

Seventh Modification of Fifth Embodiment

In the seventh modification of the fifth embodiment, the write word lineWWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the sixth modification of the fifthembodiment.

The structure of FIG. 49 is different from that of FIG. 15 in that theaccess transistor ATR and magnetic tunnel junction MTJ in each memorycell MC are respectively connected to the bit line BL and referencevoltage line SL, and in that the reference voltage lines SL extend inthe row direction.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 15, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the fifth embodiment aswell, the data read operation based on the folded bit line structureensures the operation margin. At the same time, sharing the write wordlines achieves improved integration of the memory array 10.

Eighth Modification of Fifth Embodiment

In the eighth modification of the fifth embodiment, the read word lineRWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the sixth modification of the fifthembodiment.

The structure of FIG. 50 is different from that of FIG. 16 in that theaccess transistor ATR and magnetic tunnel junction MTJ in each memorycell MC are respectively connected to the bit line BL and referencevoltage line SL, and in that the reference voltage lines SL extend inthe row direction.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 16, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the fifth embodiment aswell, the data write operation based on the folded bit line structureensures the operation margin, simplifies the structure of the peripheralcircuitry and reduces the data write noise. At the same time, sharingthe read word lines achieves improved integration of the memory array10.

Sixth Embodiment

Referring to FIG. 51, the access transistor ATR is electrically coupledbetween the magnetic tunnel junction MTJ and write word line WWL. Themagnetic tunnel junction MTJ is coupled between the access transistorATR and bit line BL. The access transistor ATR has its gate coupled tothe read word line RWL.

The write word line WWL is set to the ground voltage Vss in the dataread operation. Thus, when the read word line RWL is activated to theselected state (H level) in the data read operation, the accesstransistor ATR is responsively turned ON, whereby the sense current Iscan be supplied to the path formed by the bit line BL, magnetic tunneljunction MTJ, access transistor ATR, and write word line WWL.

In the data write operation, the access transistor ATR is turned OFF,whereby the data write current is supplied to the bit line BL and writeword line WWL. Thus, a magnetic field corresponding to the storage leveldata to be written to the magnetic tunnel junction MTJ can be generated.

Referring to FIG. 52, the write word line WWL and bit line BL arerespectively provided in the first and second metal wiring layers M1 andM2. The read word line RWL is provided in the same layer as that of thegate 130 of the access transistor ATR.

By setting the write word line WWL to the ground voltage Vss in the dataread operation, the MTJ memory cell can be provided by the two metalwiring layers M1 and M2 without providing the reference voltage line SL.As a result, the number of metal wiring layers can be reduced, resultingin reduction in manufacturing cost.

Hereinafter, the data read and write operations to and from the MTJmemory cell according to the sixth embodiment will be described.

Referring back to FIG. 3, in the data read operation, the write wordline WWL is retained in the non-selected state (L level). Since the wordline current control circuit 40 couples each write word line WWL to theground voltage Vss, the voltage level on the write word line WWL in thedata read operation is the same as that on the reference voltage lineSL, i.e., the ground voltage Vss. In the data write operation, nocurrent flows through the reference voltage line SL. Therefore, nomagnetic field is generated at the MTJ memory cell.

Accordingly, even if the reference voltage line SL is eliminated, thedata read and write operations to and from the MTJ memory cell of thesixth embodiment can be conducted by setting the voltage and current onthe write word line WWL, read word line RWL and bit line BL in the samemanner as that of FIG. 3.

Referring to FIG. 53, in the memory cell 10 according to the sixthembodiment, adjacent memory cells in the row direction share the samebit line BL. For example, the memory cell group of the first and secondmemory cell columns shares the same bit line BL1. Since the respectivestructures of the read word line RWL, write word line WWL and word linecurrent control circuit 40 as well as the memory cell operation inreading and writing the data are the same as those of FIG. 5,description thereof will not be repeated.

With such a structure, the pitch of the bit lines BL in the memory array10 can be widened also in the memory cell arrangement of the sixthembodiment capable of conducting the data read and write operations witha reduced number of wirings. As a result, the memory cells MC areefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

First Modification of Sixth Embodiment

Referring to FIG. 54, in the memory array 10 according to the firstmodification of the sixth embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL. Accordingly, thememory cells MC are arranged alternately for the same reason as that ofFIG. 7.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the sixthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the write word lines WWL in thememory array 10 can be widened also in the memory cell arrangement ofthe sixth embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

As in the case of the first embodiment, in the memory cell structure ofthe sixth embodiment, the distance between the write word line WWL andmagnetic tunnel junction MTJ is larger than that between the bit line BLand magnetic tunnel junction MTJ. This requires a larger data writecurrent to be supplied to the write word line WWL. Accordingly,increased electromigration resistance of the write word lines WWL iseffective for improved reliability of the MRAM device.

More specifically, in the memory cell arrangement of the sixthembodiment as well, increased electromigration resistance of the writeword line WWL can be achieved by making the line width (cross-sectionalarea) of the write word line WWL larger than that of the bit line BLhaving a shorter distance to the magnetic tunnel junction. As a result,the reliability of the MRAM device can be improved. Regarding a materialas well, it is desirable to form the write word line WWL from a highlyelectromigration-resistant material.

Second Modification of Sixth Embodiment

Referring to FIG. 55, in the memory array 10 according to the secondmodification of the sixth embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL. Accordingly, thememory cells MC are arranged alternately for the same reason as that ofFIG. 9. Since the structure of the other portions and the memory celloperation in reading and writing the data are the same as those of thesixth embodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the read word lines RWL in thememory array 10 can be widened also in the memory cell arrangement ofthe sixth embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Third Modification of Sixth Embodiment

Referring to FIG. 56, in the memory array 10 according to the thirdmodification of the sixth embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL as in the firstmodification of the sixth embodiment. Moreover, the read word line RWLis also shared between adjacent memory cells in the column direction.For example, the memory cell group of the second and third memory cellrows shares the same read word line RWL2. In the following memory cellrows as well, the read word lines RWL and write word lines WWL arearranged similarly.

Accordingly, the memory cells MC are arranged alternately for the samereason as that of FIG. 10. Since the structure of the other portions andthe memory cell operation in reading and writing the data are the sameas those of the sixth embodiment, detailed description thereof will notbe repeated.

With such a structure, the pitches of the write word lines WWL and readword lines RWL in the memory array 10 can be widened also in the memorycell arrangement of the sixth embodiment. As a result, the memory cellsMC can be more efficiently arranged, whereby further improvedintegration of the memory array 10 as well as further reduced chip areaof the MRAM device can be achieved as compared to the first and secondmodifications of the sixth embodiment.

Fourth Modification of Sixth Embodiment

Referring to FIG. 57, in the memory cells of the sixth embodimentarranged in rows and columns, the folded bit line structure is appliedusing two bit lines of each set of adjacent two memory cell columns, asin the case of the second embodiment.

The structure of FIG. 57 is different from that of FIG. 13 in that thereference voltage lines SL are eliminated, and in the connection betweenthe memory cell MC and the read word line RWL, write word line WWL andbit line BL. Since the structure of the peripheral circuitry forsupplying the data write current and sense current to the bit line BL,and the operation in reading and writing the data are the same as thoseof FIG. 13, detailed description thereof will not be repeated.

Accordingly, in the memory cell arrangement of the sixth embodiment aswell, the read and write operation margins can be ensured by the foldedbit line structure. Moreover, like the second embodiment, the structureof the peripheral circuitry including the data write circuit 50 w andread/write control circuit 60 can be simplified as well as the datawrite noise can be reduced.

Fifth Modification of Sixth Embodiment

In the fifth modification of the sixth embodiment, the write word lineWWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the fourth modification of the sixthembodiment.

The structure of FIG. 58 is different from that of FIG. 15 in that thereference voltage lines SL are eliminated, and in the connection betweenthe memory cell MC and the read word line RWL, write word line WWL andbit line BL. Since the structure of the peripheral circuitry forsupplying the data write current and sense current to the bit line BL,and the operation in reading and writing the data are the same as thoseof FIG. 15, detailed description thereof will not be repeated.

Accordingly, in the memory cell arrangement of the sixth embodiment aswell, the data read operation based on the folded bit line structureensures the operation margin. At the same time, sharing the write wordlines achieves improved integration of the memory array 10.

Sixth Modification of Sixth Embodiment

In the sixth modification of the sixth embodiment, the read word lineRWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the fourth modification of the sixthembodiment.

The structure of FIG. 59 is different from that of FIG. 16 in that thereference voltage lines SL are eliminated, and in the connection betweenthe memory cell MC and the read word line RWL, write word line WWL andbit line BL. Since the structure of the peripheral circuitry forsupplying the data write current and sense current to the bit line BL,and the operation in reading and writing the data are the same as thoseof FIG. 16, detailed description thereof will not be repeated.

Accordingly, in the memory cell arrangement of the sixth embodiment aswell, the data write operation based on the folded bit line structureensures the operation margin, simplifies the structure of the peripheralcircuitry and reduces the data write noise. At the same time, sharingthe read word lines achieves improved integration of the memory array10.

Seventh Embodiment

Referring to FIG. 60, the bit line BL is electrically coupled to themagnetic tunnel junction MTJ through the access transistor ATR. Themagnetic tunnel junction MTJ is coupled between the write word line WWLand access transistor ATR. The read word line RWL is coupled to the gateof the access transistor ATR. The read word line RWL and write word lineWWL extend in parallel with each other, and the bit line BL extends insuch a direction as to cross the read and write word lines.

The memory cell of the seventh embodiment corresponds to the memory cellof the sixth embodiment with its bit line BL and write word line WWLswitched in position with respect to the magnetic tunnel junction MTJand access transistor ATR. Accordingly, the kinds of signal lines arethe same as those of the sixth embodiment, and each signal line has thesame voltage and current waveform as those of the sixth embodiment inthe data read and write operations. Therefore, detailed descriptionthereof will not be repeated.

Referring to FIG. 61, the bit line BL and write word line WWL arerespectively provided in the first and second metal wiring layers M1 andM2. The read word line RWL is provided in the same layer as that of thegate 130 of the access transistor ATR. The magnetic tunnel junction MTJis directly coupled to the write word line WWL.

Thus, in the memory cell structure of the seventh embodiment as well,the MTJ memory cell can be provided by the two metal wiring layers M1and M2 without providing the reference voltage line SL.

Moreover, the bit line BL is coupled to the magnetic tunnel junction MTJthrough the access transistor ATR. Therefore, each bit line BL iselectrically coupled only to the MTJ memory cell to be read, i.e., theMTJ memory cell of the memory cell row corresponding to the read wordline RWL activated to the selected state (H level). Accordingly, as inthe third embodiment, the capacitance of the bit line BL can besuppressed, whereby a high-speed operation can be achieved particularlyfor the read operation.

Referring to FIG. 62, in the memory array 10 of the seventh embodiment,adjacent memory cells in the row direction share the same bit line BL.

Since the respective structures of the read word line RWL, write wordline WWL and word line current control circuit 40 as well as the memorycell operation in reading and writing the data are the same as those ofthe sixth embodiment, description thereof will not be repeated.

With such a structure, the pitch of the bit lines BL in the memory array10 can be widened also in the memory cell arrangement of the seventhembodiment capable of reducing the number of signal wirings as well asachieving a high-sped data read operation. As a result, the memory cellsMC are efficiently arranged, whereby improved integration of the memoryarray 10 as well as reduced chip area of the MRAM device can beachieved.

As in the third embodiment, in the memory cell structure of the seventhembodiment, the distance between the bit line BL and magnetic tunneljunction MTJ is larger than that between the write word line WWL andmagnetic tunnel junction MTJ. This requires a larger data write currentto be supplied to the bit line BL. Accordingly, increasedelectromigration resistance of the bit lines BL is effective forimproved reliability of the MRAM device.

More specifically, in the memory cell arrangement of the seventhembodiment as well, increased electromigration resistance of the bitline BL can be achieved by making the line width (cross-sectional area)of the bit line BL larger than that of the write word line WWL having ashorter distance to the magnetic tunnel junction. As a result, thereliability of the MRAM device can be improved. Regarding a material aswell, it is desirable to form the bit line BL from a highlyelectromigration-resistant material.

First Modification of Seventh Embodiment

Referring to FIG. 63, in the memory array 10 according to the firstmodification of the seventh embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL, as in the case ofFIG. 54. Accordingly, the memory cells MC are arranged alternately forthe same reason as that of FIG. 7.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the seventhembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the write word lines WWL in thememory array 10 can be widened also in the memory cell arrangement ofthe seventh embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Second Modification of Seventh Embodiment

Referring to FIG. 64, in the memory array 10 according to the secondmodification of the seventh embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL as in the case ofFIG. 55. The memory cells MC are arranged alternately as in the case ofFIG. 9.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the seventhembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the read word lines RWL in thememory array 10 can be widened also in the memory cell arrangement ofthe seventh embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Third Modification of Seventh Embodiment

Referring to FIG. 65, in the memory array 10 according to the thirdmodification of the seventh embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL as in the firstmodification of the seventh embodiment. Moreover, the read word line RWLis also shared between adjacent memory cells in the column direction.For example, the memory cell group of the second and third memory cellrows shares the same read word line RWL2. In the following memory cellrows as well, the read word lines RWL and write word lines WWL arearranged similarly. The memory cells MC are arranged alternately as inthe case of FIG. 10.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the seventhembodiment, detailed description thereof will not be repeated.

With such a structure, the pitches of the write word lines WWL and readword lines RWL in the memory array 10 can be widened also in the memorycell arrangement of the seventh embodiment. As a result, the memorycells MC can be more efficiently arranged, whereby further improvedintegration of the memory array 10 as well as further reduced chip areaof the MRAM device can be achieved as compared to the first and secondmodifications of the seventh embodiment.

Fourth Modification of Seventh Embodiment

Referring to FIG. 66, in the memory cells of the seventh embodimentarranged in rows and columns, the folded bit line structure is appliedusing two bit lines of each set of adjacent two memory cell columns, asin the case of the second embodiment.

The structure of FIG. 66 is different from that of FIG. 57 in that, ineach memory cell MC, the access transistor ATR is connected to the bitline BL and the magnetic tunnel junction MTJ is connected to the writeword line WWL.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 57, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the seventh embodiment aswell, the read and write operation margins can be ensured by the foldedbit line structure. Moreover, like the second embodiment, the structureof the peripheral circuitry including the data write circuit 50 w andread/write control circuit 60 can be simplified as well as the datawrite noise can be reduced.

Fifth Modification of Seventh Embodiment

In the fifth modification of the seventh embodiment, the write word lineWWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the fourth modification of the seventhembodiment.

The structure of FIG. 67 is different from that of FIG. 58 in that, ineach memory cell MC, the access transistor ATR is connected to the bitline and the magnetic tunnel junction MTJ is connected to the write wordline WWL.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 58, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the seventh embodiment aswell, the data read operation based on the folded bit line structureensures the operation margin. At the same time, sharing the write wordlines achieves improved integration of the memory array 10.

Sixth Modification of Seventh Embodiment

In the sixth modification of the seventh embodiment, the read word lineRWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the fourth modification of the seventhembodiment.

The structure of FIG. 68 is different from that of FIG. 59 in that, ineach memory cell MC, the access transistor ATR is connected to the bitline and the magnetic tunnel junction MTJ is connected to the write wordline WWL.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 59, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the seventh embodiment aswell, the data write operation based on the folded bit line structureensures the operation margin, simplifies the structure of the peripheralcircuitry and reduces the data write noise. At the same time, sharingthe read word lines achieves improved integration of the memory array10.

Eighth Embodiment

Referring to FIG. 69, in the eighth embodiment, a read bit line RBL forsupplying the sense current Is in the data read operation and a writebit line WBL for supplying the data write current ±Iw in the data writeoperation are provided separately.

The access transistor ATR is electrically coupled between the magnetictunnel junction MTJ and read bit line RBL. In other words, the read bitline RBL is electrically coupled to the magnetic tunnel junction MTJthrough the access transistor ATR.

The magnetic tunnel junction MTJ is coupled to the access transistor ATRand write bit line WBL. The read word line RWL and write word line WWLextend in such a direction as to cross the read bit line RBL and writebit line WBL. The read word line RWL is coupled to the gate of theaccess transistor ATR.

First, the data write operation will be described with reference to FIG.70.

According to the row selection result of the row decoder 20, the wordline driver 30 drives the voltage on the write word line WWLcorresponding to the selected row to the selected state (H level). Inthe non-selected rows, the voltage level on the write word lines WWL isretained in the non-selected state (L level). The word line currentcontrol circuit 40 couples each write word line WWL to the groundvoltage Vss. Thus, the data write current Ip can be supplied to thewrite word line WWL of the selected row.

Moreover, the voltage on the write bit line WBL is controlled in thesame manner as that of the voltage on the bit line BL in the data writeoperation as described in FIG. 3, whereby the data write current ±Iwcorresponding to the storage data level to be written can be supplied tothe write bit line WBL. Thus, the data can be written to the MTJ memorycell.

In the data write operation, the read word lines RWL are retained in thenon-selected state (L level). The read bit lines RBL are precharged tothe high voltage state (Vcc). Since the access transistors ATR areretained in the OFF state, no current flows through the read bit linesRBL in the data write operation.

In the data read operation, the write word lines WWL are retained in thenon-selected state (L level), and the voltage level thereof is fixed tothe ground voltage Vss by the word line current control circuit 40.

According to the row selection result of the row decoder 20, the wordline driver 30 drives the read word line RWL corresponding to theselected row to the selected state (H level). In the non-selected rows,the voltage level of the read word lines RWL is retained in thenon-selected state (L level). The read/write control circuits 50 and 60supply a fixed amount of sense current Is for conducting the data readoperation to the read bit line RBL, and sets the voltage on the writebit lines WBL to the ground voltage Vss.

The read bit lines RBL are precharged to the high voltage state (Vcc)prior to the data read operation. Therefore, when the access transistorATR is turned ON (actuated) in response to activation of the read wordline RWL, a current path of the sense current Is is formed by the readbit line RBL, access transistor ATR, magnetic tunnel junction MTJ andwrite bit line WBL (ground voltage Vss). Thus, the read bit line RBL issubjected to the voltage drop corresponding to the storage data,enabling the same data read operation as that shown in FIG. 3.

Referring to FIG. 71, the read bit line RBL is provided in the firstmetal wiring layer M1 so as to be coupled to the source/drain region 110of the access transistor ATR. The write word line WWL is provided in thesecond metal wiring layer M2. The write bit line WBL is provided in thethird metal wiring layer M3 so as to be coupled to the magnetic tunneljunction MTJ. The MTJ memory cell is coupled to the source/drain region120 of the access transistor ATR through the first and second metalwiring layers M1, M2, metal film 150, and barrier metal 140.

The read bit line RBL is not directly coupled to the magnetic tunneljunction MTJ, but can be connected through the access transistor ATRonly to the magnetic tunnel junction MTJ of the MTJ memory cell to beread. Thus, the capacitance of the read bit line RBL can be suppressed,achieving a high-speed data read operation.

The write bit line WBL has a smaller distance to the magnetic tunneljunction MTJ. Therefore, the magnetic coupling in the data writeoperation can be increased, so that the data write current ±Iw flowingthrough the write bit line WBL in the data write operation can bereduced. As a result, the magnetic noise due to the data write currentcan be reduced as well as the current density of the write bit line canbe suppressed, achieving a more reliable operation.

The aforementioned effects can be simultaneously obtained by providingthe read bit lines RBL and write bit lines WBL separately.

Referring to FIG. 72, in the memory array 10 according to the eighthembodiment, the memory cells MC having the structure of FIG. 69 arearranged in rows and columns. The read word lines RWL and write wordlines WWL extend in the row direction, whereas the read bit lines RBLand write bit lines RBL extend in the column direction.

The word line current control circuit 40 couples each write word lineWWL to the ground voltage Vss. Thus, the voltage and current on thewrite word line WWL in the data read and write operations can becontrolled as shown in FIG. 70.

Adjacent memory cells in the row direction share either the read bitline RBL or write bit line WBL.

For example, the memory cell group of the first and second memory cellcolumns shares a single read bit line RBL1, and the memory cell group ofthe second and third memory cell columns share a single write bit lineWBL2. In the following memory cell columns as well, the read bit linesRBL and write bit lines WBL are arranged alternately in the same manner.

If the data is to be read from or written to a plurality of memory cellsMC corresponding to the same read bit line RBL or write bit line WBL,data conflict occurs. Therefore, the memory cells MC are arrangedalternately.

With such a structure, the pitches of the read bit lines RBL and writebit lines WBL in the memory array 10 can be widened. As a result, thememory cells MC can be arranged efficiently, whereby improvedintegration of the memory array 10 as well as reduced chip area of theMRAM device can be achieved.

Hereinafter, the structure of the peripheral circuitry for supplying thedata write current ±Iw and sense current Is will be described.

The column selection lines are provided corresponding to the respectivememory cell columns, i.e., the respective bit lines, separately for thedata read operation and write operation. FIG. 72 exemplarily shows theread column selection lines RCSL1 and RCSL2 respectively correspondingto the first and second memory cell columns, and the write columnselection lines WCSL1 to WCSL3 respectively corresponding to the firstto third memory cell columns. Hereinafter, such a plurality of readcolumn selection lines and a plurality of write column selection linesare also generally referred to as read column selection lines RCSL andwrite column selection lines WCSL, respectively.

In the data read operation, the column decoder 25 activates one of theplurality of read column selection lines RCSL to the selected state (Hlevel) according to the column selection result. In the data writeoperation, the column decoder 25 activates one of the plurality of writecolumn selection lines WCSL to the selected state (H level) according tothe column selection result.

Like the column selection lines, the column selection gates are alsoprovided corresponding to the respective memory cell columns, separatelyfor the data read operation and write operation. FIG. 72 exemplarilyshows the read column selection gates RCG1 and RCG2 respectivelycorresponding to the first and second memory cell columns, and the writecolumn selection gates WCG1 to WCG3 respectively corresponding to thefirst to third memory cell columns.

The write column selection gate WCG is electrically coupled between acorresponding write bit line WBL and data line IO. The read columnselection gate RCG is electrically coupled between a corresponding readbit line RBL and data line /IO.

The data I/O line pair DI/OP formed from the data lines IO and /IOtransmits the data write current ±Iw in the data write operation. In thedata read operation, the sense current is transmitted through one dataline /IO.

The data write circuit 50 w for supplying the data write current ±Iw hasits nodes Nw1 and Nw2 connected to the data lines IO and /IO,respectively. The data read circuit 51 r has its node Nr1 connected tothe data line /IO. Since the structure and operation of the data writecircuit 50 w and data read circuit 51 r are the same as those describedin FIGS. 14 and 17, detailed description thereof will not be repeated.

The read column selection lines RCSL are provided corresponding to therespective read column selection gates RCG. Similarly, the write columnselection lines WCLS are provided corresponding to the respective writecolumn selection gates WCG. For example, the read column selection gateRCG1 and write column selection gate WCG1 both corresponding to the bitline BL1 are tuned ON/OFF according to the voltage level on the readcolumn selection line RCSL1 and write column selection line WCSL1,respectively.

One of the bit lines is selected according to the decode result of thecolumn address CA, i.e., the column selection result. In response to theread column selection lines RCSL or write column selection lines WCSLactivated according to the column selection result, corresponding writecolumn selection gates WCG or read column selection gates RCG are turnedON. As a result, the selected bit line is electrically coupled to one ofthe data lines IO and /IO of the data I/O line pair DI/OP.

The read/write control circuit 60 includes write current controltransistors, precharging transistors, and write bit line voltage controltransistors, which are provided corresponding to the respective memorycell columns. FIG. 72 exemplarily shows the write current controltransistors 63-1 to 63-3 and write bit line voltage control transistors65-1 to 65-3, which are provided respectively corresponding to the firstto third memory cell columns, i.e., the write bit lines WBL1 to WBL3,and the precharging transistors 64-1 to 64-3 provided respectivelycorresponding to the read bit lines RBL1 to RBL3. Hereinafter, such aplurality of write bit line voltage control transistors are alsogenerally referred to as write bit line voltage control transistors 65.

In the data read operation, each write bit line voltage controltransistor 65 is turned ON and couples a corresponding write bit lineWBL to the ground voltage Vss in order to ensure the current path of thesense current Is. In the operation other than the data read operation,each write bit line voltage control transistor 65 is turned OFF, so thateach write bit line WBL is disconnected from the ground voltage Vss.Since the arrangement and operation of the write current controltransistors 63 and precharging transistors 64 are the same as those ofFIG. 15, description thereof will not be repeated.

With such a structure, in the data write operation, the data writecurrent ±Iw can be supplied to the path formed by the data line IO,write column selection gate WCG, write bit line WBL, write currentcontrol transistor 63, and data line /IO in the selected memory cellcolumn. Note that it is possible to control the direction of the datawrite current ±Iw by setting the respective voltages on the data linesIO and /IO in the same manner as that of the second embodiment.Accordingly, like the second embodiment, the structure of the peripheralcircuitry associated with the data write operation, i.e., the data writecircuit 50 w and read/write control circuit 60, can be simplified.

Thus, even in the structure having the read bit lines RBL and write bitlines WBL separately, the data read and write operations as shown inFIG. 70 can be conducted according to the row and column selectionresults.

First Modification of Eighth Embodiment

Referring to FIG. 73, in the memory array 10, adjacent memory cells inthe row direction share either the read bit line RBL or write bit lineWBL as in the eighth embodiment. Moreover, in the first modification ofthe eighth embodiment, adjacent memory cells in the column directionshare the same write word line WWL. For example, the memory cell groupof the first and second memory cell rows share the same write word lineWWL1. The memory cells MC are arranged alternately.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the eighthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the write word lines WWL in thememory array 10 can be widened also in the memory cell arrangement ofthe eighth embodiment having the read bit lines RBL and write bit linesWBL separately. As a result, the memory cells MC can be arrangedefficiently, whereby improved integration of the memory array 10 as wellas reduced chip area of the MRAM device can be achieved.

In the memory cell structure of the eighth embodiment, the distancebetween the write word line WWL and magnetic tunnel junction MTJ islarger than that between the write bit line WBL and magnetic tunneljunction MTJ. This requires a larger data write current to be suppliedto the write word line WWL, as in the case of the memory cell of thefirst embodiment.

Accordingly, the limitations on pitch of the write word lines WWL arereduced to ensure the cross-sectional area thereof Thus, the currentdensity of the write word line WWL can be reduced. As a result, theelectromigration resistance of the write word line WWL receiving a largedata write current is increased, whereby the reliability of the MRAMdevice can be improved. Regarding a material as well, it is desirable toform the write word line WWL from a material having higherelectromigration resistance than that of the write bit line WBL.

Second Modification of Eighth Embodiment

Referring to FIG. 74, in the memory array 10 according to the secondmodification of the eighth embodiment, adjacent memory cells in the rowdirection share either the same read bit line RBL or write bit line WBLas in the case of the eighth embodiment. Moreover, in the secondmodification of the eighth embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL. For example, thememory cell group of the first and second memory cell rows share thesame read word line RWL1. The memory cells MC are arranged alternately.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the eighthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the read word lines RWL in thememory array 10 can be widened also in the memory cell arrangement ofthe eighth embodiment having the read bit lines RBL and write bit linesWBL separately. As a result, the memory cells MC can be efficientlyarranged, whereby improved integration of the memory array 10 as well asreduced chip area of the MRAM device can be achieved.

Third Modification of Eighth Embodiment

Referring to FIG. 75, in the memory array 10 according to the thirdmodification of the eighth embodiment, adjacent memory cells in the rowdirection share the same write word line WWL, as in the firstmodification of the eighth embodiment. Moreover, the read word line RWLis also shared between adjacent memory cells in the column direction.For example, the memory cell group of the second and third memory cellrows share the same read word line RWL2. In the following memory cellrows as well, the read word lines RWL and write word lines WWL arearranged similarly.

However, in the case where both the read word line RWL and write wordline WWL are shared, it is not possible to share the read bit line RBLand write bit line WBL between adjacent memory cells in the columndirection. Accordingly, in FIG. 75, the read bit lines RBL and write bitlines WBL are both provided corresponding to the respective memory cellcolumns.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the eighthembodiment, detailed description thereof will not be repeated. Notethat, although not shown in FIG. 75 for convenience, the prechargingtransistors 64 are provided corresponding to the respective read bitlines RBL, as in the case of FIGS. 72 to 74.

With such a structure, the pitches of the write word lines WWL and readword lines RWL in the memory array 10 can be widened also in the memorycell arrangement of the eighth embodiment. As a result, the memory cellsMC can be arranged with the limitations on wiring pitch in the rowdirection being intensively reduced. Thus, improved integration of thememory array 10 as well as reduced chip area of the MRAM device can beachieved.

Fourth Modification of Eighth Embodiment

Referring to FIG. 76, in the memory cells of the eighth embodimentarranged in rows and columns, the folded bit line structure is appliedusing two read bit lines and two write bit lines of each set of adjacenttwo memory cell columns, as in the case of the second embodiment. Forexample, a write bit line pair can be formed from the write bit linesWBL1 and WBL2 respectively corresponding to the first and second memorycell columns. In this case, the write bit line WBL2 is also referred toas write bit line /WBL1 because it transmits the data complementary tothat of the write bit line WBL1. Similarly, a read bit line pair can beformed from the read bit lines RBL1 and RBL2 (/RBL1) respectivelycorresponding to the first and second memory cell columns.

In the following memory cell columns as well, the read bit lines RBL andwrite bit lines WBL are similarly arranged such that the read bit linesand write bit lines in each set of memory cell columns form a read bitline pair and a write bit line pair, respectively.

Hereinafter, one write bit line of each write bit line paircorresponding to an odd memory cell column is also generally referred toas write bit line WBL, and the other write bit line corresponding to aneven memory cell column is also generally referred to as write bit line/WBL. Thus, the data write operation can be conducted based on thefolded bit line structure.

Similarly, one read bit line of each read bit line pair corresponding toan odd memory cell column is also generally referred to as read bit lineRBL, and the other read bit line corresponding to an even memory cellcolumn is also generally referred to as read bit line /RBL. The dataread operation is conducted using the dummy memory cells provided forthe read bit lines RBL in the same manner as that of the secondembodiment. Thus, the data read operation can be conducted based on thefolded bit line structure.

The read column selection lines and write column selection lines areprovided corresponding to the respective read bit line pairs and writebit line pairs, i.e., the respective sets of memory cell columns.Accordingly, two read column selection gates RCG corresponding to thesame set are turned ON/OFF in response to a common read column selectionline RCSL, and two write column selection gates WCG corresponding to thesame set are turned ON/OFF in response to a common write columnselection line WCSL.

For example, the read column selection gates RCG1 and RCG2 correspondingto the first and second memory cell columns operate according to thecommon read column selection line RCSL1. Similarly, the write columnselection gates WCG1 and WCG2 operate according to the common writecolumn selection line WCSL1.

The write column selection gates WCG1, WCG3, . . . corresponding to thewrite bit lines WBL of the odd columns are each electrically coupledbetween a corresponding write bit line WBL and data line IO. The writecolumn selection gates WCG2, WCG4, . . . corresponding to the write bitlines /WBL of the even columns are each electrically coupled between acorresponding write bit line /WBL and data line /IO.

Similarly, the read column selection gates RCG1, RCG3, . . .corresponding to the read bit lines RBL of the odd columns are eachelectrically coupled between a corresponding read bit line RBL and dataline IO. The read column selection gates RCG2, RCG4, . . . correspondingto the read bit lines RBL of the even columns are each electricallycoupled between a corresponding read bit line /RBL and data line /IO.

The data I/O line pair DI/OP formed from the data lines IO and /IOtransmits the data write current ±Iw in the data write operation, andtransmits the sense current in the data read operation.

The data read circuit 50 r and the data write circuit 50 w for supplyingthe data write current ±Iw are connected to the data lines IO and /IOthough the current switching circuit 53 a. Since the structure andoperation of the data write circuit 50 w, data read circuit 50 r andcurrent switching circuit 53 a have been described in FIG. 14, detaileddescription thereof will not be repeated.

In response to the read column selection line RCSL or write columnselection line WCSL activated according to the decode result of thecolumn address CA, i.e., the column selection result, corresponding tworead column selection gates RCG or write column selection gates WCG areturned ON. As a result, the read bit lines RBL and /RBL of the selectedread bit line pair or the write bit lines WBL and /WBL of the selectedwrite bit line pair are electrically coupled to the data lines IO and/IO of the data I/O line pair DI/OP, respectively.

The read/write control circuit 60 includes equalizing transistors 62provided corresponding to the respective write bit line pairs and turnedON/OFF in response to the control signal WE, and write bit line voltagecontrol transistors 65 provided corresponding to the respective writebit lines WBL for electrically coupling a corresponding write bit lineto the ground voltage Vss in the data read operation. Although not shownFIG. 76, precharging transistors 64 that are turned ON/OFF in responseto the bit line precharging signal BLPR are also provided correspondingto the respective read bit lines RBL, as in the case of FIGS. 72 to 74.

With such a structure, a selected read bit line pair supplies the sensecurrent for the data read operation in the same manner as that of thebit line pair of the second embodiment in the data read operation.Similarly, a selected write word line pair supplies the data writecurrent thorough a corresponding equalizing transistor 62 for the datawrite operation in the same manner as that of the bit line pair of thesecond embodiment in the data write operation.

Accordingly, in the memory cell arrangement of the eighth embodiment aswell, the read and write operation margins can be ensured by the foldedbit line structure. Moreover, like the second embodiment, the structureof the peripheral circuitry including the data write circuit 50 w andread/write control circuit 60 is simplified, as well as the data writenoise can be reduced.

Fifth Modification of Eighth Embodiment

In the fifth modification of the eighth embodiment, the write word lineWWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure shown in the fourth modification of the eighthembodiment.

Referring to FIG. 77, in the memory array 10 according to the fifthmodification of the eighth embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL.

In the read operation, the read word line RWL is activated. The memorycells are connected to every other read bit line RBL. Therefore, everyset of adjacent two memory cell columns form a bit line pair, so thatthe data read operation based on the folded bit line structure can beconducted in the same manner as that of the fourth modification of theeighth embodiment.

On the other hand, in the data write operation, the write word line WWLshared by a plurality of memory cell rows is activated. Therefore, thedata write operation based on the folded bit line structure is notpossible. Accordingly, in the fifth modification of the eighthembodiment, activation of the column selection line in the data writeoperation is controlled on a column-by-column basis.

The read/write control circuit 60 includes write current controltransistors 63 instead of the equalizing transistors 62. The writecurrent control transistors 63 are provided corresponding to therespective memory cell columns. The write current control transistor 63is turned ON in response to activation of a corresponding write columnselection line. FIG. 77 exemplarily shows the write current controltransistors 63-1 to 63-4 respectively corresponding to the first tofourth memory cell columns, i.e., the write bit lines WBL1 to WBL4.Although not shown in the figure, the precharging transistors 64 areprovided corresponding to the respective read bit lines RBL, as in thecase of FIGS. 72 to 74.

The write current control transistors 63-1, 63-3, . . . corresponding tothe odd memory cell columns each electrically couples a correspondingwrite bit line WBL1, WBL3, . . . to the data line, /IO according to thecolumn selection result. The write current control transistors 63-2,63-4, . . . corresponding to the even memory cell columns eachelectrically couples a corresponding write bit line WBL2, WBL4, . . . tothe data line IO according to the column selection result.

Accordingly, in the selected memory cell column, the data write current±Iw can be supplied to the path formed by the data line IO (/IO), writecolumn selection gate WCG, write bit line WBL, write current controltransistor 63, and data line /IO (IO). It is possible to control thedirection of the data write current ±Iw by setting the respectivevoltages on the data lines IO and /IO in the same manner as that of thesecond embodiment. Accordingly, like the second embodiment, thestructure of the peripheral circuitry associated with the data writeoperation, i.e., the data write circuit 50 w and read/write controlcircuit 60, can be simplified.

Although the data write operation based on the folded bit line structureis not possible, the pitch of the write word lines WWL in the memoryarray 10 can be widened. As a result, like the first modification of theeighth embodiment, improved integration of the memory array 10 and thusreduced chip area of the MRAM device can be achieved. Improvedreliability of the MRAM device can also be achieved by increasing theelectromigration resistance of the write word lines WWL.

Sixth Modification of Eighth Embodiment

In the sixth modification of the eighth embodiment, the read word lineRWL is shared between adjacent memory cells, in addition to the foldedbit line structure of the fourth modification of the eighth embodiment.

Referring to FIG. 78, in the memory array 10 according to the sixthmodification of the eighth embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL.

The read/write control circuit 60 includes equalizing transistors 62 andwrite bit line voltage control transistors 65, which are provided in thesame manner as that of the fourth modification of the eighth embodiment.Although not shown in the figure, the read/write control circuit 60further includes precharging transistors 64 corresponding to therespective read bit lines RBL as in the case of FIGS. 72 to 74.

In the data write operation, the write word line WWL is activated. Thememory cells are connected to every other write bit line WBL. Therefore,every set of adjacent two memory cell columns form a write bit linepair, so that the data write operation based on the folded bit linestructure can be conducted in the same manner as that of the fourthmodification of the eighth embodiment. Accordingly, the write operationmargin can be ensured as in the second embodiment. Moreover, thestructure of the peripheral circuitry associated with the data writeoperation, i.e., the data write circuit 50 w and read/write controlcircuit 60, can be simplified as well as the magnetic noise produced inwriting the data can be reduced.

On the other hand, in the data read operation, the read word line RWLshared by a plurality of memory cell rows is activated. In this case,the data read operation based on the folded bit line structure is notpossible.

According to the sixth modification of the eighth embodiment, thecurrent switching circuit 53 b and data read circuit 51 r are providedinstead of the current switching circuit 53 a and data read circuit 50r. Since the structure and operation of the current switching circuit 53b and data read circuit 51 r have been described in FIGS. 16 and 17,detailed description thereof will not be repeated.

Such a structure cannot ensure the read operation margin by the foldedbit line structure, but can reduce the pitch of the read word lines RWLin the memory array 10. Therefore, the data read operation can beconducted normally. As a result, improved integration of the memoryarray 10 and thus reduced chip area of the MRAM device can be achievedas in the case of the third modification of the second embodiment.

Accordingly, in the memory cell arrangement of the eighth embodiment aswell, the data write operation based on the folded bit line structureensures the operation margin, simplifies the structure of the peripheralcircuitry and reduces the data write noise. At the same time, sharingthe read word lines RWL achieves improved integration of the memoryarray 10.

Ninth Embodiment

Referring to FIG. 79, in the memory cell according to the ninthembodiment, the access transistor ATR is electrically coupled betweenthe read bit line RBL and magnetic tunnel junction MTJ. The magnetictunnel junction MTJ is coupled between the access transistor ATR andwrite word line WWL. The access transistor ATR has its gate coupled tothe read word line RWL.

As described in FIG. 70, the voltage level on the write word line WWL isset to the ground voltage Vss in the data read operation. This enablesthe write word line WWL to be coupled to the magnetic tunnel junctionMTJ instead of the read bit line RBL. Thus, in the data read operation,the access transistor ATR is turned ON in response to activation of theread word line RWL, so that a current path of the sense current Is isformed by the read bit line RBL, access transistor ATR, magnetic tunneljunction MTJ and write word line WWL. Thus, a voltage changecorresponding to the storage data in the magnetic tunnel junction MTJcan be produced on the read bit line RBL.

On the other hand, in the data write operation, the data write currentsrespectively flowing through the write word line WWL and write bit lineWBL cause the magnetic fields orthogonal to each other to be generatedat the magnetic tunnel junction MTJ.

Accordingly, it is possible to conduct the data write and readoperations to and from the MTJ memory cell of the ninth embodiment bysetting the voltage and current on the read word line RWL, write wordline WWL, read bit line RBL and write bit line WBL in the same manner asthat of FIG. 70.

Referring to FIG. 80, in the ninth embodiment, the write bit line WBLneed not be coupled to another wiring and MTJ memory cell. Therefore,the write bit line WBL can be arbitrarily arranged so as to improve themagnetic coupling with the magnetic tunnel junction MTJ. For example,the write bit line WBL can be provided directly under the magnetictunnel junction MTJ by using the second metal wiring layer M2.

The write word line WWL is provided in the third metal wiring layer M3so as to be electrically coupled to the magnetic tunnel junction MTJ.Since the read word line RWL, access transistor ATR and read bit lineRBL are provided in the same manner as that of FIG. 71, descriptionthereof will not be repeated.

With such a structure, the read bit line RBL is coupled to the magnetictunnel junction MTJ through the access transistor ATR. Therefore, theread bit line RBL is not directly connected to a multiplicity ofmagnetic tunnel junctions MTJ of the same memory cell column, wherebythe capacitance of the read bit line RBL can be suppressed. As a result,a high-speed read operation can be achieved.

Moreover, the reduced distance between the magnetic tunnel junction MTJand write word line WWL enables increased magnetic coupling in the datawrite operation. Therefore, the data write current Ip on the write wordline WWL can be set to a smaller value. As a result, the magnetic noisedue to the data write current is reduced as well as the current densityon the write bit line is suppressed, whereby a more reliable operationcan be achieved.

Accordingly, the aforementioned effects can be simultaneously obtainedin both the data read and write operations by providing the read bitlines RBL and write bit lines WBL separately as in the case of thememory cell of the eighth embodiment.

Referring to FIG. 81, in the memory array 10 of the ninth embodiment,adjacent memory cells in the row direction share either the read bitline RBL or write bit line WBL, as in the case of FIG. 72.

For example, the memory cell group of the first and second memory cellcolumns shares a single read bit line RBL1, and the memory cell group ofthe second and third memory cell columns shares a single write bit lineWBL2. In the following memory cell columns as well, the read bit linesRBL and write bit lines WBL are arranged alternately in the same manner.

Moreover, this memory cell structure eliminates the need to provide thewrite bit line voltage control transistors 65 in the read/write controlcircuit 60.

Since the respective arrangements and structures of the memory cell MC,read word line RWL, write word line WWL, word line current controlcircuit 40, and peripheral circuitry for supplying the data writecurrent and sense current according to the column selection result arethe same as those of the eighth embodiment, description thereof will notbe repeated.

With such a structure, pitches of the read bit lines RBL and write bitlines WBL in the memory array 10 can be widened also in the memory cellarrangement of the ninth embodiment. As a result, the memory cells MCcan be efficiently arranged, whereby improved integration of the memoryarray 10 as well as reduced chip area of the MRAM device can beachieved.

Moreover, in the memory cell structure of the ninth embodiment, thedistance between the write bit line WBL and magnetic tunnel junction MTJis larger than that between the write word line WWL and magnetic tunneljunction MTJ. This requires a larger data write current to be suppliedto the write bit line WBL. Accordingly, increased electromigrationresistance of the write bit lines WBL is effective for improvedreliability of the MRAM device.

More specifically, in the memory cell arrangement of the ninthembodiment as well, increased electromigration resistance of the writebit line WBL can be achieved by making the line width (cross-sectionalarea) of the write bit line WBL larger than that of the write word lineWWL having a shorter distance to the magnetic tunnel junction. As aresult, the reliability of the MRAM device can be improved. Regarding amaterial as well, it is desirable to form the write bit line WBL from ahighly electromigration-resistant material.

First Modification of Ninth Embodiment

Referring to FIG. 82, in the memory array 10 according to the firstmodification of the ninth embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL as in the case ofFIG. 73.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the ninthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitch of the write word lines WWL in thememory array 10 can be widened also in the memory cell arrangement ofthe ninth embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Second Modification of Ninth Embodiment

Referring to FIG. 83, in the memory array 10 according to the secondmodification of the ninth embodiment, adjacent memory cells in thecolumn direction share the same read word line RWL as in the case ofFIG. 74.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the ninthembodiment, detailed description thereof will not be repeated.

With such a structure, the widened pitch of the read word lines RWL inthe memory array 10 can be reduced also in the memory cell arrangementof the ninth embodiment. As a result, the memory cells MC can beefficiently arranged, whereby improved integration of the memory array10 as well as reduced chip area of the MRAM device can be achieved.

Third Modification of Ninth Embodiment

Referring to FIG. 84, in the memory array 10 according to the thirdmodification of the ninth embodiment, adjacent memory cells in thecolumn direction share the same write word line WWL as in the firstmodification of the ninth embodiment. The read word line RWL is alsoshared between adjacent memory cells in the column direction. Forexample, the memory cell group of the second and third memory cell rowsshare the same read word line RWL2. In the following memory cell rows aswell, the read word lines RWL and write word lines WWL are arrangedsimilarly.

As in the case of FIG. 75, in the case where both the read word line RWLand write word line WWL are shared, it is not possible to share the readbit line RBL and write bit line WBL between adjacent memory cells in therow direction. Accordingly, the read bit lines RBL and write bit linesWBL are both provided corresponding to the respective memory cellcolumns.

Since the structure of the other portions and the memory cell operationin reading and writing the data are the same as those of the ninthembodiment, detailed description thereof will not be repeated.

With such a structure, the pitches of the write word lines WWL and readword lines RWL in the memory array 10 can be widened also in the memorycell arrangement of the ninth embodiment. As a result, the memory cellsMC can be arranged with the limitations on wiring pitch in the rowdirection being intensively reduced. Thus, improved integration of thememory array 10 as well as reduced chip area of the MRAM device can beachieved.

Fourth Modification of Ninth Embodiment

Referring to FIG. 85, in the memory cells of the seventh embodimentarranged in rows and columns, the folded bit line structure is appliedusing two read bit lines and two write bit lines of each set of adjacenttwo memory cell columns, as in the case of the fourth modification ofthe eighth embodiment.

The structure of FIG. 85 is different from that of the fourthmodification of the eighth embodiment shown in FIG. 76 in that, in eachmemory cell MC, the write word line WWL is connected to the magnetictunnel junction MTJ and the write bit line WBL is not connected to themagnetic tunnel junction MTJ. Moreover, this memory cell structureeliminates the need to provide the write bit line voltage controltransistors 65 in the read/write control circuit 60.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 76, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the fourth embodiment aswell, the read and write operation margins can be ensured by the foldedbit line structure. Moreover, like the second embodiment, the structureof the peripheral circuitry including data write circuit 50 w andread/write control circuit 60 can be simplified as well as the datawrite noise can be reduced.

Fifth Modification of Ninth Embodiment

In the fifth modification of the ninth embodiment, the write word lineWWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the fourth modification of the ninthembodiment.

The structure of FIG. 86 is different from that of the fifthmodification of the eighth embodiment shown in FIG. 77 in that, in eachmemory cell MC, the write word line WWL is connected to the magnetictunnel junction MTJ and the write bit line WBL is not connected to themagnetic tunnel junction MTJ. Moreover, this memory cell structureeliminates the need to provide the write bit line voltage controltransistors 65 in the read/write control circuit 60.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 77, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the ninth embodiment aswell, the data read operation based on the folded bit line structureensures the operation margin. At the same time, sharing the write wordlines achieves improved integration of the memory array 10.

Sixth Modification of Ninth Embodiment

In the sixth modification of the ninth embodiment, the read word lineRWL is shared between adjacent memory cell rows, in addition to thefolded bit line structure of the fourth modification of the ninthembodiment.

The structure of FIG. 87 is different from that of the sixthmodification of the eighth embodiment shown in FIG. 78 in that, in eachmemory cell MC, the write word line WWL is connected to the magnetictunnel junction MTJ and the write bit line WBL is not connected to themagnetic tunnel junction MTJ. Moreover, this memory cell structureeliminates the need to provide the write bit line voltage controltransistors 65 in the read/write control circuit 60.

Since the structure of the other portions and the operation in readingand writing the data are the same as those of FIG. 78, detaileddescription thereof will not be repeated.

Accordingly, in the memory cell arrangement of the ninth embodiment aswell, the data write operation based on the folded bit line structureensures the operation. margin, simplifies the structure of theperipheral circuitry and reduces the data write noise. At the same time,sharing the read word lines achieves improved integration of the memoryarray 10.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spritand scope of the present invention being limited only by the terms ofthe appended claims.

1. A thin film magnetic memory device, comprising: a memory array havinga plurality of magnetic memory cells arranged in every other memory cellrow and every other memory cell column such that each memory cell ofsaid plurality of memory cells is separated from another by an adjoiningmemory cell location in a row direction and an adjoining memory celllocation in a column direction, each of said plurality of magneticmemory cells including a magnetic storage portion having a resistancevalue that varies according to a level of storage data to be writtenwhen a data write magnetic field applied by first and second data writecurrents is larger than a predetermined magnetic field, and a memorycell selection gate for passing a data read current therethrough intosaid magnetic storage portion in a data read operation; a plurality ofwrite word lines provided corresponding to the respective rows of themagnetic memory cells, and selectively activated according to a rowselection result in a data write operation so as to cause said firstdata write current to flow therethrough; a plurality of read word linesprovided corresponding to the respective rows, for actuating thecorresponding memory cell selection gate according to a row selectionresult in said data read operation; a plurality of write data linesprovided corresponding to the respective columns of the magnetic memorycells, for causing said second data write current to flow therethroughin said data write operation; and a plurality of read data linesprovided corresponding to the respective columns, for causing said dataread current to flow therethrough in said data read operation, whereinadjacent magnetic memory cells share a corresponding one of at least oneof said plurality of write word lines, said plurality of read wordlines, said plurality of read data lines and said plurality of writedata lines.
 2. A thin film magnetic memory device, comprising: a memoryarray having a plurality of magnetic memory cells arranged in rows andcolumns, each of said plurality of magnetic memory cells including amagnetic storage portion having a resistance value that varies accordingto a level of storage data to be written when a data write magneticfield applied by first and second data write currents is larger than apredetermined magnetic field, and a memory cell selection gate forpassing a data read current therethrough into said magnetic storageportion in a data read operation; a plurality of write word linesprovided corresponding to the respective rows of the magnetic memorycells, and selectively activated according to a row selection result ina data write operation so as to cause said first data write current toflow therethrough; a plurality of read word lines provided correspondingto the respective rows, for actuating the corresponding memory cellselection gate according to a row selection result in said data readoperation; a plurality of write data lines provided corresponding to therespective columns of the magnetic memory cells, for causing said seconddata write current to flow therethrough in said data write operation;and a plurality of read data lines provided corresponding to therespective columns, for causing said data read current to flowtherethrough in said data read operation, wherein adjacent magneticmemory cells share a corresponding one of at least one of said pluralityof write word lines, said plurality of read word lines, said pluralityof read data lines and said plurality of write data lines, wherein saidadjacent magnetic memory cells share one of the corresponding write wordline and the corresponding write data line, which is located fartherfrom the respective magnetic storage portions, and said one of the writeword line and the write data line has a larger cross-sectional area thanthat of the other of the write word line and the write data line.
 3. Athin film magnetic memory device comprising: a memory array having aplurality of magnetic memory cells arranged in rows and columns, each ofsaid plurality of magnetic memory cells including a magnetic storageportion having a resistance value that varies according to a level ofstorage data to be written when a data write magnetic field applied byfirst and second data write currents is larger than a predeterminedmagnetic field, and a memory cell selection gate for passing a data readcurrent therethrough into said magnetic storage portion in a data readoperation; a plurality of write word lines provided corresponding to therespective rows of the magnetic memory cells, and selectively activatedaccording to a row selection result in a data write operation so as tocause said first data write current to flow therethrough; a plurality ofread word lines provided corresponding to the respective rows, foractuating the corresponding memory cell selection gate according to arow selection result in said data read operation; a plurality of writedata lines provided corresponding to the respective columns of themagnetic memory cells, for causing said second data write current toflow therethrough in said data write operation; and a plurality of readdata lines provided corresponding to the respective columns, for causingsaid data read current to flow therethrough in said data read operation,wherein adjacent magnetic memory cells share a corresponding one of atleast one of said plurality of write word lines, said plurality of readword lines, said plurality of read data lines and said plurality ofwrite data lines, wherein one of each write word line and each writedata line, which is located farther from the corresponding magneticstorage portions, is formed from a material having higherelectromigration resistance than that of the other of each write wordline and each write data line.
 4. A thin film magnetic memory device,comprising: a memory array having a plurality of magnetic memory cellsarranged in rows and columns, each of said plurality of magnetic memorycells including a magnetic storage portion having a resistance valuethat varies according to a level of storage data to be written when adata write magnetic field applied by first and second data writecurrents is larger than a predetermined magnetic field, and a memorycell selection gate for passing a data read current therethrough intosaid magnetic storage port on in a data read operation; a plurality ofwrite word lines provided corresponding to the respective rows of themagnetic memory cells, and selectively activated according to a rowselection result in a data write operation so as to cause said firstdata write current to flow therethrough; a plurality of read word linesprovided corresponding to the respective rows, for actuating thecorresponding memory cell selection gate according to a row selectionresult in said data read operation; a plurality of write data linesprovided corresponding to the respective columns of the magnetic memorycells, for causing said second data write current to flow therethroughin said data write operation; and a plurality of read data linesprovided corresponding to the respective columns, for causing said dataread current to flow therethrough in said data read operation, whereinadjacent magnetic memory cells share a corresponding one of at least oneof said plurality of write word lines, said plurality of read wordlines, said plurality of read data lines and said plurality of writedata lines, wherein adjacent magnetic memory cells in the columndirection share a corresponding one of said plurality of write wordlines, every two of said plurality of read data lines form a read dataline pair in said data read operation, the magnetic memory cellsselected by a same read word line are respectively connected to one ofthe two read data lines of each of said read data line pairs, and saiddata read current is supplied to each of the two read data lines of theread data line pair corresponding to a column selection result.
 5. Athin film magnetic memory device comprising: a memory array having aplurality of magnetic memory cells arranged in rows and columns, each ofsaid plurality of magnetic memory cells including a magnetic storageportion having a resistance value that varies according to a level ofstorage data to be written when a data write magnetic field applied byfirst and second data write currents is larger than a predeterminedmagnetic field, and a memory cell selection gate for passing a data readcurrent therethrough into said magnetic storage portion in a data readoperation; a plurality of write word lines provided corresponding to therespective rows of the magnetic memory cells, and selectively activatedaccording to a row selection result in a data write operation so as tocause said first data write current to flow therethrough; a plurality ofread word lines provided corresponding to the respective rows, foractuating the corresponding memory cell selection gate according to arow selection result in said data read operation; a plurality of writedata lines provided corresponding to the respective columns of themagnetic memory cells, for causing said second data write current toflow therethrough in said data write operation; and a plurality of readdata lines provided corresponding to the respective columns, for causingsaid data read current to flow therethrough in said data read operation,wherein adjacent magnetic memory cells share a corresponding one of atleast one of said plurality of write word lines, said plurality of readword lines, said plurality of read data lines and said plurality ofwrite data lines. wherein adjacent magnetic memory cells in the columndirection share a corresponding one of said plurality of read wordlines, every two of said plurality of write data lines form a write dataline pair in said data write operation, the magnetic memory cellsselected by a same write word line are respectively connected to one ofthe two write data lines of each of said write data line pairs, and saidsecond data write current is supplied to each of the two write datalines of the write data line pair corresponding to a column selectionresult as currents of opposite directions.
 6. The thin film magneticmemory device according to claim 5, further comprising: a switchingcircuit for electrically coupling the two write data lines of said writedata line pair to each other in said data write operation, and a datawrite circuit for supplying first and second voltages respectively tothe two write data lines of said write data line pair corresponding tothe column selection result in said data write operation.
 7. The thinfilm magnetic memory device according to claim 1, wherein said adjacentmagnetic memory cells correspond to nearest adjacent memory cells.